74lvc2g126dp NXP Semiconductors, 74lvc2g126dp Datasheet
74lvc2g126dp
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74lvc2g126dp Summary of contents
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Dual bus buffer/line driver; 3-state Rev. 06 — 7 September 2007 1. General description The 74LVC2G126 provides a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (pin nOE). A LOW-level ...
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... Type number Package Temperature range Name 74LVC2G126DP +125 C 74LVC2G126DC +125 C 74LVC2G126GT +125 C 74LVC2G126GM +125 C 4. Marking Table 2. Marking Type number 74LVC2G126DP 74LVC2G126DC 74LVC2G126GT 74LVC2G126GM 5. Functional diagram 1A 2 1OE 2OE 7 Fig 1. Logic symbol 74LVC2G126_6 Product data sheet ...
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... NXP Semiconductors 6. Pinning information 6.1 Pinning Fig 3. Pin configuration SOT505-2 (TSSOP8) and SOT765-1 (VSSOP8) 74LVC2G126 1OE GND 4 Transparent top view Fig 4. Pin configuration SOT833-1 (XSON8) 6.2 Pin description Table 3. Pin description Symbol Pin SOT505-2, SOT765-1, SOT833-1 1OE ...
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... NXP Semiconductors 7. Functional description [1] Table 4. Function table Input nOE [ HIGH voltage level LOW voltage level don’t care high-impedance OFF-state 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). ...
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... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter +85 C amb V HIGH-level input voltage IH V LOW-level input voltage IL V LOW-level output voltage OL V HIGH-level output voltage input leakage current ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter +125 C amb V HIGH-level input voltage IH V LOW-level input voltage IL V LOW-level output voltage OL V HIGH-level output voltage input leakage current I I OFF-state output current ...
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... NXP Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground 0 V); for test circuit see Symbol Parameter Conditions t propagation delay nA to nY; see enable time nOE to nY; see disable time nOE to nY; see dis ...
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... NXP Semiconductors 12. Waveforms Measurement points are given in Logic levels: V and V are typical output voltage levels that occur with the output load Fig 6. The data input (nA) to output (nY) propagation delays nOE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH ...
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... NXP Semiconductors Test data is given in Table 10. Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 8. Load circuitry for switching times Table 10 ...
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... NXP Semiconductors 13. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0.95 mm 1.1 0.25 0.00 0.75 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. ...
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... NXP Semiconductors VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0. 0.12 0.00 0.60 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...
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... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 2.0 mm 0.5 0.04 0.17 1.9 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...
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... NXP Semiconductors XQFN8: plastic extremely thin quad flat package; no leads; 8 terminals; body 1.6 x 1.6 x 0.5 mm terminal 1 index area metal area not for soldering 2 1 terminal 1 index area DIMENSIONS (mm are the original dimensions) A UNIT max 0.05 0.25 1.65 mm 0.5 0.00 0.15 1.55 OUTLINE VERSION IEC SOT902 Fig 12 ...
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... NXP Semiconductors 14. Abbreviations Table 11. Abbreviations Acronym Description CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 12. Revision history Document ID Release date 74LVC2G126_6 20070907 • Modifications: In Section 10 “ ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 14 Abbreviations ...