adg633 Analog Devices, Inc., adg633 Datasheet - Page 2

• Manufacturer Part Number: adg633
• Description: Cmos +v/+5 V/+3 V Triple Spdt Switch
• Manufacturer: Analog Devices, Inc.

DUAL SUPPLY
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
ADG633–SPECIFICATIONS
Temperature range is as follows: B Version: –40°C to +85°C.Y Version: –40°C to +125°C.
Guaranteed by design, not subject to production test.
Total Harmonic Distortion, THD + N
Analog Signal Range
I
On Resistance (R
On Resistance Match between
On Resistance Flatness (R
On Resistance Flatness (R
On Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current I
C
t
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
–3 dB Bandwidth
C
C
C
I
SS
TRANS
ON
OFF
DD
IN
S
D
D
Channels (R
(OFF)
, C
, Digital Input Capacitance
(EN)
(OFF)
(EN)
S
(ON)
INL
INL
INL
ON
ON
)
1
or I
or I
)
INL
(V
INH
D
INH
DD
S
D
(OFF)
(OFF)
, I
= +5 V ±10%, V
FLAT(ON)
FLAT(ON)
S
(ON)
2
BBM
)
SS
= –5 V ±10%, GND = 0 V, unless otherwise noted.)
+25
52
75
0.8
1.3
9
12
±0.005
±0.2
±0.005
±0.2
±0.005
±0.2
0.005
2
60
90
70
95
25
40
40
2
4
–90
0.025
–90
580
4
7
12
0.01
0.01

C
B Version Y Version
–40
to +85
90
1.8
13
110
120
45

C

C
–2–
–40
to +125
V
V
V toV
100
2
14
±5
±5
±5
2.4
0.8
±1
130
135
50
10
1
1
SS
SS
SS
SS
toV
toV
toV

C
DD
DD

C
Unit
V
 typ
 max
 typ
 max
 typ
 max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
A typ
A max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
pC max
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
A typ
A max
A typ
A max
% typ
V
Test Circuit 10
V
Test Conditions/Comments
V
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
V
R
R
R = 300
V
R
R
R = 300
V
R
R
R = 300
V
R
R
R = 300
V
V
C
R
R
R = 50
f = 1 MHz; Test Circuit 9
R
R
R = 600 , 2 V p-p,
f = 20 Hz to 20 kHz
R
R
R = 50
f = 1 MHz; Test Circuit 11
R
R
R = 50
f = 1 MHz
f = 1 MHz
f = 1 MHz
Digital Inputs = 0 V or 5.5 V
Digital Inputs = 0 V or 5.5 V
DD
DD
DD
S
S
DD
S
D
D
D
IN
L
L
L
L
S
L
L
L
L
S
L
L
L
L
S
L
L
L
L
S1
S
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
= ±4.5 V, I
= +3.5 V, I
= ±3 V, I
= 3 V; Test Circuit 5
= 3 V; Test Circuit 7
= 3 V; Test Circuit 7
= 0 V, R
= 300
= 300
= 300
= 300
= 50
= 50
= 50
= ±4.5 V, V
= ±4.5 V, V
= V
= 1 nF; Test Circuit 8
= 1 nF; Test Circuit 8
= V
= V
= +5.5 V, V
= +5.5 V, V
= +4.5 V, V
= +5 V, V
S
S2
INL
INL
INL
= ±4.5 V; Test Circuit 4
, C
, C
, C
= 3 V; Test Circuit 6
, C
, C
, C
, C
or V
or V
S
S
= 0 ,
L
L
L
L
L
L
L
L
L
S
S
SS
= 1 mA
S
S
L
L
L
L
L
L
L
L
L
L
L
L
INH
= 5 pF,
= 5 pF,
= 5 pF,
= 5 pF,
= 5 pF;
= 5 pF;
= 1 mA;
= 1 mA
SS
SS
SS
= 4.5 V;
= 4.5 V;
= 35 pF,
= 35 pF,
= 35 pF,
= 35 pF,
= 35 pF,
= 35 pF,
= 35 pF,
= 35 pF,
= –5 V;
= –5.5 V
= –5.5 V
= –4.5 V
REV. 0