74aup1g32gw NXP Semiconductors, 74aup1g32gw Datasheet
74aup1g32gw
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74aup1g32gw Summary of contents
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Low-power 2-input OR gate Rev. 02 — 21 July 2006 1. General description The 74AUP1G32 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit ...
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... Table 1. Ordering information Type number Package Temperature range Name 74AUP1G32GW +125 C 74AUP1G32GM +125 C 74AUP1G32GF +125 C 4. Marking Table 2. Marking Type number 74AUP1G32GW 74AUP1G32GM 74AUP1G32GF 5. Functional diagram mna164 Fig 1. Logic symbol 74AUP1G32_2 Product data sheet Description TSSOP5 plastic thin shrink small outline package ...
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Philips Semiconductors 6. Pinning information 6.1 Pinning 74AUP1G32 GND 001aaf028 Fig 4. Pin configuration SOT353-1 (TSSOP5) 6.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 ...
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Philips Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V ...
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Philips Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V HIGH-state input voltage IH V LOW-state input voltage IL V ...
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Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V HIGH-state input voltage IH V LOW-state input voltage IL V ...
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Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +125 C amb V HIGH-state input voltage IH V LOW-state input voltage IL V ...
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Philips Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter amb HIGH-to-LOW and PHL ...
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Philips Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter amb C power dissipation capacitance MHz [1] All typical values ...
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Philips Semiconductors Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter HIGH-to-LOW and PHL PLH LOW-to-HIGH propagation delay ...
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Philips Semiconductors Test data is given in Table 11. Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance Z ...
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Philips Semiconductors 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. ...
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Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT ...
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Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max ...
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Philips Semiconductors 14. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor Transistor Logic 15. Revision history Table ...
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Philips Semiconductors 16. Legal information 16.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...
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Philips Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...