cy62128v18ll-200zri Cypress Semiconductor Corporation., cy62128v18ll-200zri Datasheet - Page 4
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cy62128v18ll-200zri
Manufacturer Part Number
cy62128v18ll-200zri
Description
1-mb 128k X 8 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
1.CY62128V18LL-200ZRI.pdf
(11 pages)
Document #: 38-05231 Rev. *H
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Note:
V
I
t
t
Parameter
8. Full device operation requires linear V
CCDR
CDR
R
DR
[8]
V
CE
CE
or
CC
[4]
1
2
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Parameters
OUTPUT
CC
INCLUDING
R
V
for Data Retention
R1
R2
V
TH
TH
CC
JIG AND
SCOPE
50 pF
Description
R1
CC
ramp from V
V
CC(min.)
t
CDR
[8]
R2
2.5V (2.2V - 2.7V)
DR
to V
16600
15400
CC(min.)
8000
1.20
V
V
Rise Time = 1 V/ns
CC
IN
DATA RETENTION MODE
> V
= 1.5V, CE
> 100 µs.
V
CC
CC
GND
− 0.2V or V
V
DR
Equivalent to:
OUTPUT
1
> 1.5V
> V
Conditions
10%
CC
IN
3.0V (2.7V - 3.6V)
− 0.2V, CE
< 0.2V
ALL INPUT PULSES
90%
1103
1554
1.75
645
THEVENIN
2
< 0.2V,
R
TH
V
CC(min.)
EQUIVALENT
t
R
L
LL
90%
V
10%
Min.
100
Fall Time = 1 V/ns
1.5
CY62128DV30
0
Typ.
Unit
Ω
Ω
Ω
V
[4]
Page 4 of 11
Max. Unit
4
3
µA
ns
µs
V
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