cy62137vll-70zxi Cypress Semiconductor Corporation., cy62137vll-70zxi Datasheet

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cy62137vll-70zxi

Manufacturer Part Number
cy62137vll-70zxi
Description
2-mbit 128k X 16 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05051 Rev. *E
Features
Functional Description
The CY62137V is a high-performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL
Note:
• High Speed
• Temperature Ranges
• Wide voltage range: 2.7V – 3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in Pb-free and non Pb-free standard
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com
Logic Block Diagram
— 55 ns
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
44-pin TSOP Type II package
[1]
A
A
A
A
A
A
A
A
A
A
A
10
10
6
5
4
3
2
1
0
9
8
7
Power - Down
198 Champion Court
COLUMN DECODER
DATA IN DRIVERS
Circuit
RAM Array
128K x 16
®
) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that reduces power
consumption by 99% when addresses are not toggling. The
device can also be put into standby mode when deselected
(CE HIGH) or when CE is LOW and both BLE and BHE are
HIGH. The input/output pins (I/O
a high-impedance state when: deselected (CE HIGH), outputs
are disabled (OE HIGH), BHE and BLE are disabled (BHE,
BLE HIGH), or during a write operation (CE LOW, and WE
LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
2-Mbit (128K x 16) Static RAM
16
San Jose
). If Byte High Enable (BHE) is LOW, then data
CE
BHE
BLE
8
through I/O
,
CA 95134-1709
0
to I/O
I/O
I/O
7
0
8
. If Byte High Enable (BHE) is
15
–I/O
–I/O
CY62137V MoBL
0
0
Revised July 19, 2006
) is written into the location
BHE
WE
CE
OE
BLE
through I/O
through A
7
15
0
16
through I/O
15
).
) are placed in
8
408-943-2600
to I/O
15
. See
7
), is
®
0
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cy62137vll-70zxi Summary of contents

Page 1

... Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O LOW, then data from memory will appear on I/O the truth table at the back of this data sheet for a complete description of read and write modes ...

Page 2

... Product Portfolio V Range (V) CC [2] Product Min. Typ. CY62137VLL 2.7 3.0 [3] Pin Configurations Pin Definitions Pin Number Type 1–5, 18–22, 24–27, 42–45 Input 7–10, 13–16, 29–32, 35–38 Input/Output 23 No Connect 17 Input/Control WE. When selected LOW, a WRITE is conducted. When selected HIGH, a READ 6 Input/Control CE. When LOW, selects the chip. When HIGH, deselects the chip 40, 39 Input/Control BHE, BLE ...

Page 3

Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ............... –0.5V to +4.6V DC ...

Page 4

AC Test Loads and Waveforms OUTPUT OUTPUT INCLUDING JIG AND (a) SCOPE Equivalent to: Parameters Data Retention Characteristics Parameter Description V V for Data Retention ...

Page 5

... If both byte enables are toggled together this value is 10 ns. 10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. ...

Page 6

Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) ADDRESS DATA OUT PREVIOUS DATA VALID [13, 14] Read Cycle No. 2 (OE Controlled) ADDRESS CE t ACE LZOE LZOE BHE/BLE t DBE t LZBE HIGH IMPEDANCE DATA ...

Page 7

Switching Waveforms (continued) [10, 15, 16] Write Cycle No. 1 (WE Controlled) ADDRESS BHE/BLE OE 17 DATA I/O NOTE t HZOE [10, 15, 16] Write Cycle No. 2 (CE Controlled) ADDRESS CE WE BHE/BLE OE DATA ...

Page 8

Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS CE BHE/BLE NOTE 17 DATA I/O t HZWE Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE NOTE 17 DATA ...

Page 9

Typical DC and AC Characteristics Normalized Operating Current vs. Supply Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1.7 2.2 SUPPLY VOLTAGE (V) Access Time vs. Supply Voltage 1.0 1.9 SUPPLY ...

Page 10

... Ordering Information Speed Ordering Code (ns) 55 CY62137VLL-55ZI CY62137VLL-55ZXI 70 CY62137VLL-70ZI CY62137VLL-70ZXI CY62137VLL-70ZE CY62137VLL-70ZXE CY62137VLL-70ZSXE Please contact your local Cypress sales representative for availability of these parts Package Diagrams 22 23 TOP VIEW 0.400(0.016) 0.800 BSC 0.300 (0.012) (0.0315) 18.517 (0.729) 18.313 (0.721) MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor Corporation. All product and company names mentioned in this document are the trademarks of their respective holders ...

Page 11

Document History Page ® Document Title: CY62137V MoBL 2M (128K x 16) Static RAM Document Number: 38-05051 Orig. of REV. ECN NO. Issue Date Change ** 109960 10/03/01 SZV *A 116788 09/04/02 GBI *B 237428 See ECN AJU *C 329640 ...

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