lh28f128bfht-pbtl75a Sharp Microelectronics of the Americas, lh28f128bfht-pbtl75a Datasheet - Page 25

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lh28f128bfht-pbtl75a

Manufacturer Part Number
lh28f128bfht-pbtl75a
Description
Flash Memory 16mbit 8mbitx16
Manufacturer
Sharp Microelectronics of the Americas
Datasheet

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Part Number:
LH28F128BFHT-PBTL75A
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201
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
2. I
3. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
4. Sampled, not 100% tested.
5. Applying 9.5V±0.5V to WP#/ACC provides fast erasing or fast programming mode. In this mode, WP#/ACC is power
6. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane.
7. For all pins other than those shown in test conditions, input level is V
8. Includes RY/BY#.
V
V
V
V
V
V
Symbol
ACCH
IL
IH
OL
OH
LKO
T
erase suspend mode, the device’s current draw is the sum of I
buffer) program suspend mode, the device’s current draw is the sum of I
completion. Standard address access timings (t
supply pin and supplies the memory cell current for block erasing and (page buffer) programming. Use similar power
supply trace widths and layout considerations given to the V
Applying 9.5V±0.5V to WP#/ACC during erase/program can only be done for a maximum of 1,000 cycles on each block.
WP#/ACC may be connected to 9.5V±0.5V for a total of 80 hours maximum.
CCWS
A
=+25°C unless V
and I
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
WP#/ACC during Block Erase, Full
Chip Erase, (Page Buffer) Program or
OTP Program Operations
V
CC
CCES
Lockout Voltage
are specified with the device de-selected. If read or (page buffer) program is executed while in block
CC
Parameter
is specified.
DC Characteristics (Continued)
AVQV
Notes
4,8
V
5
4
4
5
) provide new data when addresses are changed.
LHF12F17
CC
=2.7V-3.3V
V
Min.
-0.4
-0.2
CC
2.4
9.0
1.5
CCQ
CCES
power bus.
and I
Typ.
CCQ
9.5
CCWS
CCR
or GND.
V
Max.
+ 0.4
or I
and I
10.0
0.4
0.2
CCQ
CCW
CCR
. If read is executed while in (page
.
Unit
V
V
V
V
V
V
CC
V
V
I
V
V
I
OL
OH
=3.0V, V
CC
CCQ
CC
CCQ
=100µA
=-100µA
Test Conditions
=V
=V
=V
=V
CC
CC
CCQ
CCQ
CCQ
Min.,
Min.,
Rev. 0.04
Min.,
Min.,
=3.0V and
22

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