lh28f128bfht-pbtl75a Sharp Microelectronics of the Americas, lh28f128bfht-pbtl75a Datasheet - Page 30

• Manufacturer Part Number: lh28f128bfht-pbtl75a
• Description: Flash Memory 16mbit 8mbitx16
• Manufacturer: Sharp Microelectronics of the Americas

1.2.5 AC Characteristics - Write Operations
NOTES:
1. The timing characteristics for reading the status register during block erase, full chip erase, (page buffer) program and
2. A write operation can be initiated and terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (t
5. Write pulse width high (t
6. t
7. Refer to Table 5 for valid address and data for block erase, full chip erase, (page buffer) program, OTP program or lock bit
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
DVWH
AVWH
WHEH
WHDX
WHAX
WHWL
SHWH
WHGL
QVSL
WHR0
WHRL
OTP program operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
CE# or WE# (whichever goes high first). Hence, t
edge of CE# or WE# (whichever goes low last). Hence, t
configuration.
WHR0
Symbol
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
WLEL
(t
PHEL
EHR0
AVEH
SHEH
EHRL
EHWH
EHGL
ELEH
DVEH
EHDX
EHAX
EHEL
EHR0
)
)
)
)
)
)
)
)
)
)
)
)
)
) after the Read Query or Read Identifier Codes/OTP command=t
Write Cycle Time
RST# High Recovery to WE# (CE#) Going Low
CE# (WE#) Setup to WE# (CE#) Going Low
WE# (CE#) Pulse Width
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
WE# (CE#) Pulse Width High
WP#/ACC High Setup to WE# (CE#)
Going High
Write Recovery before Read
WP#/ACC High Hold from Valid SRD, RY/BY# High Z
WE# (CE#) High to SR.7 Going "0"
WE# (CE#) High to RY/BY# Going Low
WP
) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of
WPH
) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling
V
CC
Parameter
=2.7V-3.3V, T
WP
(1), (2)
LHF12F17
=t
WLWH
WPH
A
=-40°C to +85°C
=t
=t
WP#/ACC=V
WP#/ACC=V
WHWL
ELEH
=t
=t
WLEH
EHEL
=t
ACCH
IH
=t
ELWH
WHEL
AVQV
.
+100ns.
=t
Notes
3, 6
EHWL
3
4
7
5
3
3
7
3
.
Min.
150
200
75
50
40
40
25
30
0
0
0
0
0
0
t
Max.
AVQV
+50
100
Rev. 0.04
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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