m58bw016db STMicroelectronics, m58bw016db Datasheet

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m58bw016db

Manufacturer Part Number
m58bw016db
Description
16 Mbit 512kb X32, Boot Block, Burst 3v Supply Flash Memories
Manufacturer
STMicroelectronics
Datasheet

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Features
January 2008
Supply voltage
– V
– V
– V
High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state Burst
– Synchronous Burst Read
– Asynchronous Page Read
Hardware block protection
– WP pin for Write Protect of the 4 outermost
– RP pin for Write Protect of all blocks
Optimized for FDI drivers
– Fast Program / Erase Suspend latency
– Common Flash interface
Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
Low power consumption
– 5 µA typical Deep Power-down
– 60 µA typical standby for M58BW016DT/B
– Automatic standby after Asynchronous
Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
ECOPACK
and Read
buffers
Read
parameter blocks and all main blocks
time < 6 µs
150 µA typical standby for M58BW016FT/B
Read
DD
DDQ
PP
= 12 V for Fast Program (optional)
= 2.7 V to 3.6 V for Program, Erase
= V
®
DDQIN
packages available
= 2.4 V to 3.6 V for I/O
16 Mbit (512 Kb x 32, boot block, burst)
M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
Rev 15
3 V supply Flash memories
LBGA80 10 × 12 mm
PQFP80 (T)
LBGA
www.st.com
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