hm62w4100h Renesas Electronics Corporation., hm62w4100h Datasheet
hm62w4100h
Available stocks
Related parts for hm62w4100h
hm62w4100h Summary of contents
Page 1
... CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM62W4100H is packaged in 400-mil 32-pin SOJ for high density surface mounting. ...
Page 2
... HM62W4100H Series Ordering Information Type No. Access time HM62W4100HJP- HM62W4100HJP- HM62W4100HLJP- HM62W4100HLJP- Pin Arrangement 2 Package 400-mil 32-pin plastic SOJ (CP-32DB) HM62W4100HJP/HLJP Series A19 A18 A17 A16 A15 I/ ...
Page 3
... A1 A17 A7 A11 A16 decoder (MSB control . I/ Memory matrix Row 256 rows 16 columns 256 blocks 4 bit (4,194,304 bits) Column I/O Input Column decoder data A10 A8 A9 A19 A12 A13 A14 A0 A18 A15 A3 A4 (LSB) HM62W4100H Series (MSB) 3 ...
Page 4
... HM62W4100H Series Operation Table Mode H Standby Output disable Read Write Write Note Absolute Maximum Ratings Parameter Supply voltage relative Voltage on any pin relative Power dissipation Operating temperature Storage temperature Storage temperature under bias Notes (min) = – ...
Page 5
... SB1 —* 0.05* 1* — — 0.4 OL 2.4 — — OH Min Typ Max — — 6 — — 8 HM62W4100H Series = 0V) SS Unit Test conditions A Vin = Vin = Min cycle lout = Other inputs = Min cycle ...
Page 6
... HM62W4100H Series AC Characteristics ( + Test Conditions Input pulse levels: 3.0 V/0.0 V Input rise and fall time Input and output timing reference levels: 1.5 V Output load: See figures (Including scope and jig) Dout Zo=50 RL=50 Output load (A) Read Cycle Parameter Read cycle time Address access time ...
Page 7
... — — — — — 6 OHZ t — 6 WHZ is measured from the beginnig of write to the end of write. WP HM62W4100H Series -15 Min Max Unit Notes 15 — — — — — — — ...
Page 8
... HM62W4100H Series Timing Waveforms Read Timing Waveform (1) ( Address CS OE High Impedance Dout Read Timing Waveform (2) ( Address t OH Dout Valid address ACS OLZ t CLZ Valid data , Valid address t AA Valid data t OH ...
Page 9
... Dout Impedance Write Timing Waveform (1) (WE Controlled) Address OE CS WE* t Dout Din , ACS Valid data t WC Valid address OHZ 5 High impedance Valid data HM62W4100H Series t CHZ High Impedance ...
Page 10
... HM62W4100H Series Write Timing Waveform (2) (CS Controlled) Address Dout Din Valid address WHZ OW 5 High impedance Valid data 4 * ...
Page 11
... V — 40 600 A 0 — — — — 3 +25˚C, and not guaranteed. Data retention mode – 0 HM62W4100H Series Test conditions – Vin 0 (2) V Vin V – 0 – 0 ...
Page 12
... HM62W4100H Series Package Dimensions HM62W4100HJP/HLJP Series (CP-32DB) 20.71 21.08 Max 32 1 0.74 1.30 Max 0.43 0.10 0.41 0.08 Dimension including the plating thickness Base material dimension 9.40 1.27 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.25 CP-32DB Conforms Conforms 1.2 g ...
Page 13
... Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 HM62W4100H Series Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd. 16 Collyer Quay #20-00 Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Hitachi Tower ...