hm62v8512bltt-8ul Renesas Electronics Corporation., hm62v8512bltt-8ul Datasheet
hm62v8512bltt-8ul
Related parts for hm62v8512bltt-8ul
hm62v8512bltt-8ul Summary of contents
Page 1
... Single 3.0 V supply: 2 3.6 V Access time: 70/85 ns (max) Power dissipation Active: 15 mW/MHz (typ) Standby (typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output: Three state output Directly LV-TTL compatible: All inputs Battery backup operation ...
Page 2
... HM62V8512BLFP-8SL 85 ns HM62V8512BLFP-7UL 70 ns HM62V8512BLFP-8UL 85 ns HM62V8512BLTT HM62V8512BLTT HM62V8512BLTT-7SL 70 ns HM62V8512BLTT-8SL 85 ns HM62V8512BLTT-7UL 70 ns HM62V8512BLTT-8UL 85 ns HM62V8512BLRR HM62V8512BLRR HM62V8512BLRR-7SL 70 ns HM62V8512BLRR-8SL 85 ns HM62V8512BLRR-7UL 70 ns HM62V8512BLRR-8UL Package 525-mil 32-pin plastic SOP (FP-32D) 400-mil 32-pin plastic TSOP II (TTP-32D) ...
Page 3
... (Top view) Pin Description Pin name Function A0 to A18 Address input I/O0 to I/O7 Data input/output CS Chip select OE Output enable WE Write enable V Power supply CC V Ground SS HM62V8512BLTT Series V A18 1 CC A16 2 A15 A14 3 A12 A17 A13 ...
Page 4
... Block Diagram A18 A16 A12 A14 I/O0 I/O7 CS Timing Pulse Generator Read/Write Control • • • Memory Matrix • Row 1,024 4,096 • Decoder • Column I/O • Input Column Decoder Data Control A13 A17A15 A8 A9 A11 A10 A4 • • ...
Page 5
Function Table Mode H Not selected Output disable Read Write Write Note Absolute Maximum Ratings Parameter Power supply voltage Voltage on ...
Page 6
HM62V8512B Series DC Characteristics (Ta = – Parameter Symbol Min Input leakage current |I LI Output leakage current |I LO Operating power I CC supply current: DC Operating I CC1 power supply current Operating power I ...
Page 7
AC Characteristics (Ta = – Test Conditions Input pulse levels: 0 2.4 V Input rise and fall time Input timing reference levels: 1.4 V Output timing reference level: 1.5 V/1.5 V(HM62V8512B-7) 0.8 ...
Page 8
HM62V8512B Series Write Cycle Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time WE to output in high-Z Data to write time overlap Data ...
Page 9
Timing Waveforms Read Timing Waveform ( Address CS OE Dout ) OLZ HM62V8512B Series OHZ Valid Data ...
Page 10
HM62V8512B Series Write Timing Waveform (1) (OE Clock) Address Dout Din OHZ t DW Valid Data ...
Page 11
Write Timing Waveform (2) (OE Low Fixed) Address Dout Din HM62V8512B Series WHZ Valid Data t OH *10 ...
Page 12
HM62V8512B Series Low V Data Retention Characteristics (Ta = – Parameter V for data retention CC Data retention current Chip deselect to data retention time Operation recovery time Notes: 1. For L-version and 10 A (max.) ...
Page 13
Package Dimensions HM62V8512BLFP Series (FP-32D) 20.45 20.95 Max 32 1 1.00 Max 1.27 *0.40 0.08 0.15 0.38 0.06 *Dimension including the plating thickness Base material dimension 17 16 14.14 0.10 M Hitachi Code JEDEC EIAJ Weight (reference value) HM62V8512B Series ...
Page 14
... HM62V8512B Series Package Dimensions (cont.) HM62V8512BLTT Series (TTP-32D) 20.95 21.35 Max 32 1 1.27 *0.42 0.08 0.21 M 0.40 0.06 1.15 Max 0.10 *Dimension including the plating thickness Base material dimension 11.76 0.20 Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.80 0 – 5 0.50 0.10 TTP-32D Conforms — 0.51 g ...
Page 15
Package Dimensions (cont.) HM62V8512BLRR Series (TTP-32DR) 20.95 21.35 Max 1 32 1.27 *0.42 0.08 0.21 M 0.40 0.06 1.15 Max 0.10 *Dimension including the plating thickness Base material dimension HM62V8512B Series 16 17 11.76 0.20 0 – 5 Hitachi Code ...
Page 16
HM62V8512B Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that ...
Page 17
Revision Record Rev. Date Contents of Modification 0.0 Apr. 24, 1998 Initial issue 0.1 Nov. 19, 1998 DC Characteristics I max CC1 I max: 20 40/20 A SB1 Low V Data Retention Characteristics ...