bts120 ETC-unknow, bts120 Datasheet

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bts120

Manufacturer Part Number
bts120
Description
Tempfet Channel Enhancement Mode Temperature Sensor With Thyristor Characteristic
Manufacturer
ETC-unknow
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTS120
Manufacturer:
SIEMENS
Quantity:
2 000
Part Number:
BTS120
Manufacturer:
INFINEON
Quantity:
12 500
Type
BTS 120
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
Gate-source voltage
Continuous drain current,
ISO drain current
T
Pulsed drain current,
Short circuit current,
Short circuit dissipation,
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Semiconductor Group
TEMPFET
Features
C
= 85 C,
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shortet to the tab
V
GS
= 10 V,
V
100 V
DS
R
GS
V
= 20 k
DS
T
T
T
T
C
j
j
C
= 0.5 V
= – 55 ... + 150 C
= – 55 ... + 150 C
= 25 C
I
19 A
= 25 C
D
R
0.1
DS(on)
1
Symbol
V
V
V
I
I
I
I
P
P
T
R
R
D
D-ISO
D puls
SC
j
DS
DGR
GS
SCmax
tot
th JC
th JA
,
T
stg
Package
TO-220AB
Values
100
100
19
3.5
76
55
800
75
– 55 ... + 150
E
55/150/56
Pin
20
1.67
75
1
G
Ordering Code
C67078-A5009-A2
2
D
Unit
V
A
W
K/W
C
BTS 120
3
S
1
04.97
2
3

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bts120 Summary of contents

Page 1

TEMPFET Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shortet to the tab Type V DS BTS 120 100 V Maximum Ratings Parameter Drain-source voltage R Drain-gate voltage Gate-source ...

Page 2

Electrical Characteristics unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage 0. Gate threshold voltage ...

Page 3

Electrical Characteristics (cont’ unless otherwise specified. j Parameter Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage Reverse recovery time ...

Page 4

Examples for short-circuit protection – 55 ... + 150 C, unless otherwise specified. j Parameter Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time before short circuit j I Short-circuit protection SC ...

Page 5

P Max. power dissipation tot Typical output characteristics Parameter : Semiconductor Group Typ. drain-source on-state resistance DS(on) Parameter Safe operating area ...

Page 6

Drain-source on-state resistance DS(on) j Parameter Typ. transfer characteristic Parameter : ...

Page 7

I Continuous drain current Parameter Typ. gate-source leakage current GSS C Parameter Semiconductor Group Forward characteristics ...

Page 8

Transient thermal impedance Parameter : Semiconductor Group thJC p 8 BTS 120 ...

Page 9

TO 220 AB Standard C67078-A5009-A2 9.9 9.5 3.7 1) 0.75 1.05 2.54 2.54 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group Ordering Code 4.4 1.3 0.5 2.4 ...

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