fdc637an-nf073 Fairchild Semiconductor, fdc637an-nf073 Datasheet
fdc637an-nf073
Manufacturer Part Number
fdc637an-nf073
Description
Fdc637an Single N-channel, 2.5v Specified Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC637AN-NF073.pdf
(5 pages)
1999 Fairchild Semiconductor Corporation
FDC637AN
Single N-Channel, 2.5V Specified PowerTrench
General Description
This N-Channel 2.5V specified MOSFET is produced
using
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
Applications
•
•
•
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Outlines and Ordering Information
Symbol
D
DSS
GSS
D
J
DC/DC converter
Load switch
Battery Protection
, T
JA
JC
Device Marking
stg
Fairchild
SuperSOT -6
.637
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
Semiconductor's
D
TM
S
- Continuous
- Pulsed
D
FDC637AN
Parameter
D
Device
G
advanced
T
A
= 25°C unless otherwise noted
Reel Size
Features
•
•
•
•
•
than standard SO-8); low profile (1mm thick).
6.2 A, 20 V. R
Fast switching speed.
Low gate charge (10.5nC typical).
low R
SuperSOT
High performance trench technology for extremely
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
DS(ON)
.
TM
R
TM
-6 package: small footprint (72% smaller
DS(on)
DS(on)
2
3
1
MOSFET
Tape Width
= 0.024
= 0.032
FDC637AN
-55 to +150
8mm
6.2
1.6
0.8
20
20
78
30
8
@ V
@ V
GS
GS
6
5
4
= 4.5 V
= 2.5 V
November 1999
Quantity
3000 units
Units
FDC637AN, Rev. C
C/W
C/W
W
V
V
A
C
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Datasheet:
fdc637an-nf073 Summary of contents
Page 1
... Device Reel Size FDC637AN 7’’ November 1999 MOSFET = 0.024 @ V = 4.5 V DS(on 0.032 @ V = 2.5 V DS(on package: small footprint (72% smaller FDC637AN Units 20 8 6.2 20 1.6 W 0.8 -55 to +150 78 C/W 30 C/W Tape Width Quantity 8mm 3000 units FDC637AN, Rev ...
Page 2
... 1.3 A (Note determined by the user's board design. CA 2.0% Min Typ Max Units mV 100 nA -100 nA 0.4 0.82 1 mV/ C 0.019 0.024 0.028 0.041 0.025 0.032 10 A 7.4 S 1125 pF 290 pF 145 10 1.5 nC 2.2 nC 1.3 A 0.7 1.2 V FDC637AN, Rev. C ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current = 2.0V 2.5V 3.0V 4. DRAIN CURRENT ( 6. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE VOLTAGE (V) SD and Temperature. FDC637AN, Rev ...
Page 4
... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 156 C 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation R ( 156°C/W JA P(pk ( Duty Cycle 100 300 FDC637AN, Rev. C ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...