fdc634p-nf073 Fairchild Semiconductor, fdc634p-nf073 Datasheet

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fdc634p-nf073

Manufacturer Part Number
fdc634p-nf073
Description
Fdc634p P-channel 2.5v Specified Powertrench? Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
FDC634P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
D
J
DSS
GSS
, T
JA
J C
Device Marking
STG
P-Channel
.634
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
2.5V
D
D
specified
TM
S
– Continuous
– Pulsed
FDC634P
Device
Parameter
D
MOSFET
D
G
T
A
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–3.5 A, –20 V. R
Low gate charge (7.2 nC typical)
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
R
Ratings
8mm
DS(ON)
DS(ON)
–3.5
–20
–20
1.6
0.8
78
30
8
= 80 m @ V
= 110 m @ V
September 2001
6
5
4
GS
FDC634P Rev E (W)
3000 units
GS
Quantity
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C

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fdc634p-nf073 Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ September 2001 = –4.5 V DS(ON 110 –2.5 V DS(ON Ratings Units – –3.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC634P Rev E (W) ...

Page 2

... 110 77 130 =125 C J – 779 pF 121 7 1.7 nC 1.5 nC –1.3 A –0.8 –1.2 V (Note 2) b) 156°C/W when mounted on a minimum pad copper FDC634P Rev E(W) A ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC634P Rev E( ...

Page 4

... V C ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 156 C/W JA P(pk ( Duty Cycle 100 1000 FDC634P Rev E(W) ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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