This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ September 2001 = –4.5 V DS(ON 110 –2.5 V DS(ON Ratings Units – –3.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC634P Rev E (W) ...
... 110 77 130 =125 C J – 779 pF 121 7 1.7 nC 1.5 nC –1.3 A –0.8 –1.2 V (Note 2) b) 156°C/W when mounted on a minimum pad copper FDC634P Rev E(W) A ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC634P Rev E( ...
... V C ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 156 C/W JA P(pk ( Duty Cycle 100 1000 FDC634P Rev E(W) ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...