fdc699p-f077 Fairchild Semiconductor, fdc699p-f077 Datasheet

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fdc699p-f077

Manufacturer Part Number
fdc699p-f077
Description
Fdc699p P-channel 2.5v Powertrench? Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
FDC699P
P-Channel 2.5V PowerTrench
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJC
, T
Battery management
Load Switch
Battery protection
Device Marking
STG
.699
SuperSOT-6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
S
S
G
TM
FLMP
– Continuous
– Pulsed
FDC699P
Device
Parameter
S
S
S
T
A
MOSFET
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Features
• –7 A, –20 V
• High performance trench technology for extremely
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal
low R
performance in industry-standard package size
1
2
3
DS(ON)
Tape width
R
R
DS(ON)
DS(ON)
–55 to +150
8mm
Ratings
Bottom Drain
–20
±12
–40
111
1.5
0.5
–7
60
2
= 22 mΩ @ V
= 30 mΩ @ V
5
6
4
January 2004
GS
GS
FDC699P Rev C2 (W)
3000 units
= –4.5 V
= –2.5 V
Quantity
Units
°C/W
°C
W
V
V
A

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fdc699p-f077 Summary of contents

Page 1

... Reel Size 7’’ January 2004 mΩ –4.5 V DS(ON mΩ –2.5 V DS(ON Bottom Drain Ratings Units –20 V ±12 V –7 A – 1.5 °C –55 to +150 °C/W 60 111 0.5 Tape width Quantity 8mm 3000 units FDC699P Rev C2 (W) ...

Page 2

... S 2640 pF 560 pF 280 pF Ω 3 120 –1.6 A –0.7 –1.2 V (Note 111°C/W when mounted on a minimum pad copper FDC699P Rev C2 (W) ...

Page 3

... Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern FDC699P Rev C2 (W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -3. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC699P Rev C2 ( 1.2 ...

Page 5

... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 111°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 111 °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDC699P Rev C2 (W) 20 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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