fdc697p-f077 Fairchild Semiconductor, fdc697p-f077 Datasheet

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fdc697p-f077

Manufacturer Part Number
fdc697p-f077
Description
Fdc697p P-channel 1.8v Powertrench? Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
FDC697P
P-Channel 1.8V PowerTrench
General Description
This
Fairchild’s
process.
management applications.
Applications
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJC
, T
Battery management
Load Switch
Battery protection
Device Marking
STG
P-Channel
.697
It has been optimized for battery power
advanced
SuperSOT-6
S
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
S
1.8V
G
low voltage
TM
specified
FLMP
– Continuous
– Pulsed
FDC697P
Device
Parameter
S
MOSFET
Power
S
S
Trench
T
A
MOSFET
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Features
• –8 A, –20 V
• High performance trench technology for extremely
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal
low R
performance in industry-standard package size
DS(ON)
1
2
3
Tape width
R
R
R
DS(ON)
DS(ON)
DS(ON)
–55 to +150
8mm
Ratings
Bottom
Drain
–20
–40
111
1.5
0.5
±8
–8
60
2
= 20 mΩ @ V
= 25 mΩ @ V
= 35 mΩ @ V
January 2004
6
5
4
GS
GS
GS
FDC697P Rev C2 (W)
3000 units
= –4.5 V
= –2.5 V
= –1.8 V
Quantity
Units
°C/W
°C
W
V
V
A

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