bd4140hfv ROHM Co. Ltd., bd4140hfv Datasheet - Page 6

• Manufacturer Part Number: bd4140hfv
• Description: Hi-performance Regulator Ic Series For Pcs Pgood Ic For Pc
• Manufacturer: ROHM Co. Ltd.

●Operation Notes
© 2009 ROHM Co., Ltd. All rights reserved.
BD4140HFV
www.rohm.com
1. Absolute maximum ratings
2. Power supply lines
3. GND voltage
4. Inter-pin shorts and mounting errors
5. Actions in strong electromagnetic field
6. Testing on application boards
7. Regarding input pin of the IC
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can
break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any
over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as
fuses.
Please add a protection diode when a large inductance component is connected to the output terminal, and
reverse-polarity power is possible at startup or in output OFF condition.
The potential of GND pin must be minimum potential in all operating conditions.
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Parasitic element
Pin A
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
N
P
+
N
GND
P
(Example)
P substrate
P
+
OUTPUT PIN
N
Resistor
Pin A
Parasitic
element
Parasitic element
6/8
Pin B
N
P
+
C
B
N
E
GND
P
P substrate
Transistor (NPN)
P
+
N
GND
Other adjacent elements
Pin B
B
Technical Note
2009.04 - Rev.B
C
E
GND
Parasitic
element