si7652dp Vishay, si7652dp Datasheet

no-image

si7652dp

Manufacturer Part Number
si7652dp
Description
N-channel Reduced Qg, Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7652dp-T1-E3
Manufacturer:
VISHAY
Quantity:
327
Notes:
a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 s.
b. Maximum under steady state condition is 75 °C/W.
c. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73485
S09-0223-Rev. B, 09-Feb-09
Ordering Information: Si7652DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single-Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
30
8
(V)
6.15 mm
D
7
D
6
N-Channel Reduced Q
D
Si7652DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PowerPAK SO-8
Bottom View
5
0.0185 at V
0.030 at V
D
R
DS(on)
1
J
a
S
= 150 °C)
a, b
GS
GS
2
(Ω)
S
= 4.5 V
= 10 V
3
S
a
5.15 mm
4
G
a
c, d
A
a
I
= 25 °C, unless otherwise noted
D
15
12
(A)
L = 0.1 mH
T
T
T
T
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
, Fast Switching MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• High-Efficient PWM Optimized
• 100 % R
Symbol
T
R
R
Available
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
and UIS Tested
®
Power MOSFETs
Typical
a
24
G
7
N-Channel MOSFET
- 55 to 150
Limits
11.25
± 25
260
3.2
3.9
2.5
30
15
12
40
15
D
S
Maximum
32
Vishay Siliconix
9
Si7652DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
A
1

Related parts for si7652dp

si7652dp Summary of contents

Page 1

... Bottom View Ordering Information: Si7652DP-T1-E3 (Lead (Pb)-free) Si7652DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single-Pulse Avalanche Current ...

Page 2

... Si7652DP Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73485 S09-0223-Rev. B, 09-Feb- 1200 1000 800 600 400 200 Si7652DP Vishay Siliconix ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si7652DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.4 0 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µA ...

Page 5

... Document Number: 73485 S09-0223-Rev. B, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Care Si7652DP Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords