si7652dp Vishay, si7652dp Datasheet
si7652dp
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... Bottom View Ordering Information: Si7652DP-T1-E3 (Lead (Pb)-free) Si7652DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single-Pulse Avalanche Current ...
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... Si7652DP Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73485 S09-0223-Rev. B, 09-Feb- 1200 1000 800 600 400 200 Si7652DP Vishay Siliconix ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... Si7652DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.4 0 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µA ...
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... Document Number: 73485 S09-0223-Rev. B, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Care Si7652DP Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...