si7682dp Vishay, si7682dp Datasheet

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si7682dp

Manufacturer Part Number
si7682dp
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SI7682DP
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D
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SI7682DP
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Part Number:
si7682dp-T1-E3
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si7682dp-T1-E3
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si7682dp-T1-GE3
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Part Number:
si7682dpT1E3
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TOSH
Quantity:
2 629
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
30
(V)
8
6.15 mm
C
D
= 25 °C.
0.0130 at V
0.0090 at V
7
D
Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
6
DS(on)
D
PowerPAK SO-8
Bottom View
5
GS
D
GS
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
b, f
1
S
N-Channel 30-V (D-S) MOSFET
2
S
3
S
I
D
5.15 mm
20
20
(A)
4
G
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
g
11 nC
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• High-Side DC/DC Conversion
Symbol
Symbol
T
R
R
J
Available
- Notebook
- Server
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
3.5
20
G
N-Channel MOSFET
- 55 to 150
17.5
14.0
4.5
3.2
Limit
± 20
15.5
27.5
17.5
5
260
30
20
50
20
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
4.5
25
Vishay Siliconix
Si7682DP
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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si7682dp Summary of contents

Page 1

... Bottom View Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free) Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si7682DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73350 S09-0272-Rev. B, 16-Feb- thru 0.9 1.2 1 Si7682DP Vishay Siliconix 1.2 1.0 0.8 0 125 °C C 0.4 0.2 25 °C 0.0 1.0 1.4 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2000 C 1600 1200 800 C oss ...

Page 4

... Si7682DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.01 0.001 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µ 100 125 150 100 Limited by ...

Page 5

... Package Limited 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7682DP Vishay Siliconix 125 150 2.5 2.0 1.5 1.0 0.5 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www ...

Page 6

... Si7682DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... TYP. 3.98 TYP. 6.15 6.25 5.89 5.99 3.66 3.84 3.78 3.91 0.75 TYP. 1.27 BSC 1.27 TYP 0.61 0.71 0.61 0.71 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN. NOM. MAX. 0.038 0.041 0.044 0.000 - 0.002 0.013 ...

Page 8

... The minimum land pattern recommended to take full advantage of the PowerPAK thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Sili- conix MOSFETs. Click on the PowerPAK SO-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...

Page 9

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 24 mils. This matches the spacing of the two drain pads on the Pow- erPAK SO-8 dual package ...

Page 10

... No significant effect was observed Si7446DP 41 36 100 10000 0.00 Figure 6. Spreading Copper Junction-to-Ambient Performance AN821 Vishay Siliconix R vs. Spreading Copper 100 % Back Copper) 100 % 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2 ...

Page 11

... AN821 Vishay Siliconix SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET r with temperature (Figure 7). DS(on) On-Resistance vs. Junction Temperature 1 1 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J Figure 7. MOSFET r vs. Temperature DS(on) A MOSFET generates internal heat due to the current passing through the channel ...

Page 12

... RECOMMENDED MINIMUM PADS FOR PowerPAK 0.024 (0.61) 0.026 (0.66) 0.050 (1.27) Return to Index Return to Index Document Number: 72599 Revision: 21-Jan-08 ® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.032 (0.82) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix 0.040 (1.02) www.vishay.com 15 ...

Page 13

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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