hcs573ms Intersil Corporation, hcs573ms Datasheet

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hcs573ms

Manufacturer Part Number
hcs573ms
Description
Rad-hard Octal Transparent Latch, Three-state
Manufacturer
Intersil Corporation
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS573MS is a Radiation Hardened octal transpar-
ent three-state latch with an active low output enable. The
HCS573MS utilizes advanced CMOS/SOS technology. The
outputs are transparent to the inputs when the Latch Enable (LE)
is HIGH. When the Latch Enable (LE) goes LOW, the data is
latched. The Output Enable (OE) controls the tri-state outputs.
When the Output Enable (OE) is HIGH, the outputs are in the
high impedance state. The latch operation is independent of the
state of the Output Enable.
The HCS573MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS573MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCS573DMSR
HCS573KMSR
HCS573D/Sample
HCS573K/Sample
HCS573HMSR
Day (Typ)
- Bus Driver Outputs - 15 LSTTL Loads
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
RAD (Si)/s
-55
-55
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/Bit-
324
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
Octal Transparent Latch, Three-State
SCREENING LEVEL
Pinouts
GND
OE
D0
D1
D2
D3
D4
D5
D6
D7
HCS573MS
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
FLATPACK PACKAGE (FLATPACK)
20 LEAD CERAMIC DUAL-IN-LINE
20 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
OE
D0
D1
D2
D3
D4
D5
D6
D7
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
TOP VIEW
TOP VIEW
Radiation Hardened
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
Spec Number
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
PACKAGE
11
File Number
VCC
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
LE
518771
VCC
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
LE
4056

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hcs573ms Summary of contents

Page 1

... Output Enable. The HCS573MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS573MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART NUMBER ...

Page 2

... OUTPUT ENABLE High Level L = Low Level X = Immaterial Z = High Impedance I = Low voltage level prior to the high-to-low latch enable transition h = High voltage level prior to the high-to-low latch enable transition HCS573MS TRUTH TABLE LATCH ENABLE ...

Page 3

... Functional Test VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2) NOTES: 1. All voltages reference to device GND. 2. For functional tests VO 4.0V is recognized as a logic “1”, and VO Specifications HCS573MS Reliability Information Thermal Resistance SBDIP Package 10mA Ceramic Flatpack Package . . . . . . . . . . . 25mA Maximum Package Power Dissipation at +125 SBDIP Package ...

Page 4

... The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. Specifications HCS573MS GROUP (NOTES 1, 2) ...

Page 5

... AC measurements assume RL = 500 , CL = 50pF, Input 3ns, VIL = GND, VIH = VCC. 3. For functional tests VO 4.0V is recognized as a logic “1”, and VO TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 PARAMETER ICC IOL/IOH IOZL/IOZH Specifications HCS573MS (NOTES 1, 2) CONDITIONS TEMPERATURE 0.5V is recognized as a logic “0”. GROUP B SUBGROUP DELTA LIMIT ...

Page 6

... Each pin except VCC and GND will have a resistor of 680 OPEN NOTE: Each pin except VCC and GND will have a resistor of 47K Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Specifications HCS573MS TABLE 6. APPLICABLE SUBGROUPS METHOD GROUP A SUBGROUPS 100%/5004 ...

Page 7

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com HCS573MS 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition hrs ...

Page 8

... DATA VS VS TPLH QN VS FIGURE 1. LATCH ENABLE PROPAGATION DELAYS TTLH VOH 80% 20% OUTPUT VOL FIGURE 3. DATA SET-UP AND HOLD TIMES AC Load Circuit HCS573MS INPUT LEVEL DATA VS TH( TPHL QN VS FIGURE 2. LATCH ENABLE PREREQUISITE TIMES PARAMETER VCC VIH TTHL VS 80% 20% ...

Page 9

... VIH INPUT VS VIL TPZH VOH VT OUTPUT VOZ THREE-STATE HIGH VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VT 2.25 VW 3.60 GND 0 HCS573MS Three-State Low Load Circuit TPLZ VW UNITS Three-State High Load Circuit DUT TPHZ CL = 50pF 500 UNITS 332 ...

Page 10

... Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 m x 100 mils Metallization Mask Layout D1 (3) D2 (4) D3 (5) D4 (6) D5 (7) D6 (8) (9) D7 HCS573MS HCS573MS D0 OE VCC Q0 (2) (1) (20) (19) (10) (11) (12) GND LE Q7 333 (18) Q1 (17) Q2 (16) Q3 (15) Q4 ...

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