acpl-w302 Avago Technologies, acpl-w302 Datasheet - Page 6

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acpl-w302

Manufacturer Part Number
acpl-w302
Description
0.4 Amp Output Current Igbt Gate Driver Optocoupler
Manufacturer
Avago Technologies
Datasheet
Table 6. Switching Specifications (AC)
Over recommended operating conditions unless otherwise specified.
Table 7. Package Characteristics
Notes:
1. Derate linearly above 70°C free air temperature at a rate of 0.3 mA/°C.
2. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs with I
3. Derate linearly above 85°C, free air temperature at the rate of 4.0 mW/°C.
4. Input power dissipation does not require derating.
5. Maximum pulse width = 50 µs, maximum duty cycle = 0.5%.
6. In this test, V
7. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
8. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 4500 V
9. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
10. PDD is the difference between t
11. Common mode transient immunity in the high state is the maximum tolerable |dV
12. Common mode transient immunity in a low state is the maximum tolerable |dV
13. This load condition approximates the gate load of a 1200 V/20 A IGBT.
14. The power supply current increases when operating frequency and Q
6
Parameter
Propagation Delay Time to High
Output Level
Propagation Delay Time to Low
Output Level
Propagation Delay Difference
Between Any Two Parts or
Channels
Rise Time
Fall Time
Output High Level Common
Mode Transient Immunity
Output Low Level Common
Mode Transient Immunity
Parameter
Input-Output Momentary
Input-Output Resistance
Input-Output Capacitance
Withstand Voltage
peak minimum = 0.2 A. See Application section for additional details on limiting I
detection current limit I
EN/DIN EN 60747-5-2 Insulation Characteristics Table, if applicable.
the output will remain in the high state (i.e. V
output will remain in a low state (i.e. V
OH
is measured with a DC load current. When driving capacitive load V
I-O
< 5 µA). This test is performed before 100% production test for partial discharge (method B) shown in the IEC/
PHL
and t
Symbol
R
C
V
O
I-O
Symbol
PDD
|CM
|CM
ISO
I-O
t
t
t
t
< 1.0 V).
PLH
PHL
R
F
PLH
H
L
|
|
between any two parts or channels under the same test conditions.
O
> 6.0 V).
Min.
3750
Min.
10
10
0.1
0.1
-0.5
10
Typ.
0.6
Typ.
0.2
0.3
50
50
12
g
Max. Units
of the driven IGBT increases.
Max. Units
0.7
0.7
0.5
pF
V
CM
µs
µs
µs
ns
ns
kV/µs
kV/µs
rms
OL
/dt| of the common mode pulse, V
OH
peak.
CM
will approach V
/dt| of the common mode pulse V
RH < 50% for 1 min.
Freq=1 MHz
Test Conditions
T
V
A
R
Duty Cycle = 50%,
I
I-O
Test Conditions
C
f = 10 kHz,
V
T
V
F
g
A
= 25°C,
g
CC
CM
= 7 mA,
= 500 V
= 75 ,
= 1.5 nF,
= 25°C,
= 30 V
= 1000 V
CC
as I
OH
approaches zero amps.
rms
for 1 second (leakage
CM
11, 12,
15
16
Fig.
16
8, 9, 10,
Fig.
, to assure that the
CM
to assure that
Note
13
13
10
11
12
Note
8, 9
9
O

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