bcx5316tc Zetex Semiconductors plc., bcx5316tc Datasheet

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bcx5316tc

Manufacturer Part Number
bcx5316tc
Description
Pnp Silicon Planar Medium Power Transistor
Manufacturer
Zetex Semiconductors plc.
Datasheet
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPE –
PARTMARKING DETAILS –
BCX51
BCX51-10 – AC
BCX51-16 – AD
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter BCX53
Breakdown
Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
– AA
BCX53
BCX52
BCX51
BCX51
BCX52
BCX52
BCX52-10 – AG
BCX52-16 – AM
amb
=25°C
SYMBOL MIN.
V
V
V
I
I
V
V
h
-10
-16
f
C
CBO
EBO
T
BCX51 – BCX54
BCX52 – BCX55
BCX53 – BCX56
– AE
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(on)
obo
-100
-60
-45
-80
-60
-45
-5
25
40
25
63
100
150
BCX53
BCX53-10 – AK
BCX53-16 – AL
3 - 34
amb
TYP.
I
SYMBOL
V
V
V
I
P
T
CM
C
CBO
CEO
EBO
tot
j
:T
= 25°C unless otherwise stated).
– AH
stg
MAX. UNIT CONDITIONS.
-0.1
-20
-20
-0.5
-1.0
250
160
250
25
BCX51
V
V
V
V
V
nA
V
V
MHz
pF
-45
-45
A
A
-65 to +150
I
I
I
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
f=100MHz
V
C
C
C
C
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
CB
BCX52
=-100 A
=-100 A
=-10mA*
=-10mA*
=-10 A
=-500mA, I
=-500mA, V
=-5mA, V
=-150mA, V
=-500mA, V
=-150mA, V
=-150mA, V
=-50mA, V
=-100 A
=-10mA*
-1.5
-60
-60
-5
-1
=-30V
=-30V, T
=-4V
=-10V, f=1MHz
1
C
BCX51
BCX52
BCX53
BCX53
CE
SOT89
-100
amb
-80
CE
B
B
CE
CE
CE
CE
CE
=-2V*
=-50mA*
=-10V,
=150°C
=-2V*
=-2V*
=-2V*
=-2V*
=-2V*
C
UNIT
E
°C
W
A
A
V
V
V

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