bcx5616tc Zetex Semiconductors plc., bcx5616tc Datasheet
bcx5616tc
Manufacturer Part Number
bcx5616tc
Description
Npn Silicon Planar Medium Power Transistor
Manufacturer
Zetex Semiconductors plc.
Datasheet
1.BCX5616TC.pdf
(1 pages)
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
PARTMARKING DETAILS:-
BCX54 – BA
BCX55 – BE
BCX56 – BH
COMPLEMENTARY TYPES:-
BCX54 – BCX51
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range T
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage V
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
BCX54-10 – BC
BCX55-10 – BG
BCX56-10 – BK
BCX55 – BCX52
amb
=25°C
BCX54
BCX55
BCX56
BCX54
BCX55
BCX56
SYMBOL
V
C
V
V
I
I
V
h
f
CBO
EBO
T
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(on)
FE
obo
–10
–16
BCX56 – BCX53
SYMBOL
V
V
V
I
I
P
CM
C
BCX54-16 – BD
BCX55-16 – BM
BCX56-16 – BL
tot
j
3 - 35
CBO
CEO
EBO
:T
amb
stg
MIN. TYP. MAX. UNIT CONDITIONS.
45
60
100
45
60
80
5
25
40
25
63
100
150
= 25°C unless otherwise stated).
BCX54
45
45
0.1
20
20
0.5
1.0
250
160
250
15
-65 to +150
BCX55
V
V
V
nA
V
V
MHz I
pF
A
A
60
60
5
2
1
1
I
I
I
V
V
V
I
I
I
I
I
I
I
f=100MHz
V
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
CB
=10 A
=500mA, I
=500mA, V
=5mA, V
=150mA, V
=500mA, V
=150mA, V
=150mA, V
=50mA, V
=100 A
=10mA*
=30V
=30V, T
=4V
=10V, f=1MHz
C
BCX56
BCX54
BCX55
BCX56
100
80
B
CE
amb
CE
B
CE
=2V*
CE
CE
CE
CE
=50mA*
=10V,
=150°C
C
=2V*
=2V*
=2V*
=2V*
=2V*
UNIT
E
W
°C
V
V
V
A
A
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