2sa1797 Unisonic Technologies, 2sa1797 Datasheet - Page 2

• Manufacturer Part Number: 2sa1797
• Description: Pnp Silicon Transistor
• Manufacturer: Unisonic Technologies

2SA1797
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Note: 1. Single pulse, P
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Note: Measured using pulse current.
ABSOLUTE MAXIMUM RATINGS
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER
RANGE
RANK
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
W
=10ms
FE
SYMBOL
DC
PULSE(Note 1)
TO-92NL
SOT-223
SOT-89
TO-252
V
BV
BV
BV
CE(SAT)
Cob
I
I
h
CBO
EBO
f
FE
T
CBO
CEO
EBO
120-240
A
I
I
I
V
V
I
V
V
V
(Ta=25°C)
C
C
E
C
CB
EB
CE
CE
CB
/I
(Ta=25°C, unless otherwise specified)
= -50µA
= -50µA
= -1mA
B
= -5V
= -50V
= -2V, I
= -2V, I
= -10V, I
= -1A/-50mA (Note)
TEST CONDITIONS
SYMBOL
C
E
V
V
V
T
=0.5A, f=100MHz
=-0.5A (Note)
P
E
T
CBO
CEO
I
STG
EBO
=0A, f=1MHz
C
C
J
200-400
PNP SILICON TRANSISTOR
B
-55 ~ +150
RATINGS
150
-50
-50
0.8
0.5
1.9
-6
-5
-2
1
MIN
120
-50
-50
-6
-0.15 -0.35
TYP
200
36
MAX UNIT
-0.1
-0.1
400
QW-R208-029,D
UNIT
°C
°C
W
W
W
W
2 of 4
V
V
V
A
A
MHz
µA
µA
pF
V
V
V
V