2sa1312 TOSHIBA Semiconductor CORPORATION, 2sa1312 Datasheet
2sa1312
Manufacturer Part Number
2sa1312
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SA1312.pdf
(5 pages)
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Audio Frequency Low Noise Amplifier Applications
·
·
·
·
·
·
Maximum Ratings
Marking
High voltage: V
Excellent h
High h
Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz
Complementary to 2SC3324
Small package
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
FE:
Characteristics
h
FE
FE
linearity: h
= 200~700
CEO
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= −120 V
(Ta = = = = 25°C)
h= 0.95 (typ.)
FE
(I
C
= −0.1 mA)/ h
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1312
j
FE
(I
-55~125
C
Rating
-120
-120
-100
-20
150
125
= −2 mA)
-5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-236MOD
2-3F1A
SC-59
2003-03-27
2SA1312
Unit: mm
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2sa1312 Summary of contents
Page 1
... Storage temperature range Marking 2SA1312 = −0.1 mA −2 mA Symbol Rating -120 V CBO -120 V CEO -5 V EBO -100 150 C T 125 j -55~125 T stg 1 Unit JEDEC TO-236MOD mW JEITA SC-59 °C TOSHIBA 2-3F1A °C Weight: 0.012 g (typ.) 2003-03-27 2SA1312 Unit: mm ...
Page 2
... - MHz -0.1 mA 100 Hz ( -0.1 mA kHz ( 2SA1312 Min Typ. Max Unit ¾ ¾ -0.1 mA ¾ ¾ -0.1 mA ¾ 200 700 ¾ ¾ -0.3 V ¾ ¾ 100 MHz ¾ ...
Page 3
... 3 2SA1312 2003-03-27 ...
Page 4
... 4 2SA1312 2003-03-27 ...
Page 5
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2SA1312 000707EAA 2003-03-27 ...