2sa1312 TOSHIBA Semiconductor CORPORATION, 2sa1312 Datasheet - Page 2

• Manufacturer Part Number: 2sa1312
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
( ) marking symbol
FE
Characteristics
classification GR (G): 200~400, BL (L): 350~700
(Ta = = = = 25°C)
V
Symbol
NF (1)
NF (2)
CE (sat)
I
I
CBO
h
C
EBO
f
FE
T
ob
(Note)
V
V
V
I
V
V
V
Rg = 10 kW
V
Rg = 10 kW
C
CB
EB
CE
CE
CB
CE
CE
= -10 mA, I
= -5 V, I
= -120 V, I
= -6 V, I
= -6 V, I
= -10 V, I
= -6 V, I
= -6 V, I
2
Test Condition
C
C
C
C
C
B
E
= 0
= -2 mA
= -1 mA
= -0.1 mA, f = 100 Hz,
= -0.1 mA, f = 1 kHz,
E
= -1 mA
= 0, f = 1 MHz
= 0
Min
200
¾
¾
¾
¾
¾
¾
¾
Typ.
100
0.5
0.2
¾
¾
¾
¾
4
2003-03-27
2SA1312
-0.1
-0.1
-0.3
Max
700
¾
¾
6
3
MHz
Unit
mA
mA
pF
dB
V