2sa1586 TOSHIBA Semiconductor CORPORATION, 2sa1586 Datasheet
2sa1586
Manufacturer Part Number
2sa1586
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SA1586.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA1586
Manufacturer:
toshiba
Quantity:
30 000
Company:
Part Number:
2sa1586-GR
Manufacturer:
TOSHIBA
Quantity:
21 000
Part Number:
2sa1586-GR
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2sa1586-GR(TE85L
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2sa1586-GR(TE85L)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2sa1586-GR(TE85L,F
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2sa1586-GR,LF
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2sa1586-Y
Manufacturer:
TOSHIBA
Quantity:
2 880
Company:
Part Number:
2sa1586-Y(T5L
Manufacturer:
TMT
Quantity:
9 123
Company:
Part Number:
2sa1586-Y(T5L,F,H)
Manufacturer:
Epcos
Quantity:
61 828
Audio Frequency General Purpose Amplifier Applications
·
·
·
·
·
·
Maximum Ratings
Electrical Characteristics
Marking
High voltage and high current: V
Excellent h
High h
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC4116
Small package
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
( ) marking symbol
FE:
FE
Characteristics
Characteristics
h
classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
FE
FE
linearity: h
= 70~400
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
(Ta = = = = 25°C)
= 0.95 (typ.)
FE
(I
C
(Ta = = = = 25°C)
= −0.1 mA)/ h
CEO
V
Symbol
Symbol
V
V
V
CE (sat)
= −50 V, I
I
I
T
CBO
h
C
EBO
P
NF
CBO
CEO
EBO
I
I
T
f
stg
FE
C
B
T
ob
C
2SA1586
j
(Note)
FE
V
V
V
I
V
V
V
Rg = 10 kW
C
C
CB
EB
CE
CE
CB
CE
(I
= -100 mA, I
= −150 mA (max)
-55~125
C
Rating
= -5 V, I
= -50 V, I
= -6 V, I
= -10 V, I
= -10 V, I
= -6 V, I
-150
-50
-50
-30
100
125
-5
= −2 mA)
1
Test Condition
C
C
C
E
C
E
= 0
= -2 mA
= -0.1 mA, f = 1 kHz,
B
= 0
= 0, f = 1 MHz
= -1 mA
= -10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
¾
¾
70
¾
80
¾
¾
Typ.
-0.1
1.0
¾
¾
¾
¾
4
2-2E1A
SC-70
2003-03-27
2SA1586
―
-0.1
-0.1
-0.3
Max
400
10
¾
7
Unit: mm
MHz
Unit
mA
mA
pF
dB
V
Related parts for 2sa1586
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2sa1586 Summary of contents
Page 1
... Unit JEDEC mW JEITA SC-70 °C TOSHIBA 2-2E1A °C Weight: 0.006 g (typ.) Min Typ. ¾ ¾ ¾ ¾ 70 ¾ ¾ -0.1 ¾ 80 ¾ 4 ¾ 1.0 2003-03-27 2SA1586 Unit: mm ― Max Unit -0.1 mA -0.1 mA 400 -0.3 V ¾ MHz ...
Page 2
... 2 2SA1586 2003-03-27 ...
Page 3
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 2SA1586 000707EAA 2003-03-27 ...