2sa1615 Renesas Electronics Corporation., 2sa1615 Datasheet

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2sa1615

Manufacturer Part Number
2sa1615
Description
Pnp Silicon Epitaxial Transistor For High-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. D16119EJ2V0DS00 (2nd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
DESCRIPTION
ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
• Large current capacity:
• High h
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
I
h
V
C(DC)
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FE
CE(sat)
= 200 MIN. (V
2. Printing board mounted
= −10 A, I
FE
≤ −0.25 V (I
and low collector saturation voltage:
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
C(pulse)
CE
C
Note 2
= −2.0 V, I
= −4.0 A, I
Note 1
= −15 A
PNP SILICON EPITAXIAL TRANSISTOR
C
B
P
P
= −0.5 A)
= −0.05 A)
T
T
(T
(T
FOR HIGH-SPEED SWITCHING
I
V
V
V
I
C(pulse)
I
A
C
C(DC)
B(DC)
T
The mark <R> shows major revised points.
CBO
CEO
T
EBO
= 25°C)
= 25°C)
stg
j
A
= 25°C)
DATA SHEET
−55 to +150
−0.5
−30
−20
−10
−10
−15
150
1.0
15
SILICON POWER TRANSISTOR
2SA1615,1615-Z
°C
°C
W
W
V
V
V
A
A
A
2002

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2sa1615 Summary of contents

Page 1

... PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: = − −15 A ...

Page 2

... Data Sheet D16119EJ2V0DS 2SA1615,1615-Z MIN. TYP. MAX. Unit μ −1.0 A μ −1.0 A 200 600 160 −0.2 −0.25 V −0.9 −1.2 V 180 MHz 220 300 2SA1615-Z 6.5 ±0.2 5.0 ±0.2 2.3 ±0.2 0.5 ±0.1 4.4 ±0.2 Note Note 0.5 ±0.1 0.5 ±0.1 2.3 ±0.3 0.15 ±0.15 from 0 to 0.2 mm. ...

Page 3

... TYPICAL CHARACTERISTICS (T A Case Temperature T Single pulse Collector to Emitter Voltage V –15 –10 –5 Base to Emitter Voltage V = 25°C) Case Temperature T (°C) C (V) Collector to Emitter Voltage V CE (V) BE Data Sheet D16119EJ2V0DS 2SA1615,1615-Z (°C) C (V) CE Collector Current I ( ...

Page 4

... Collector Current I SWITCHING TIME ( TEST CIRCUIT on stg f 4 (A) C Base current waveform Collector current waveform Data Sheet D16119EJ2V0DS 2SA1615,1615-Z Collector Current I (A) C ...

Page 5

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SA1615,1615-Z Not all M8E 02. 11-1 ...

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