2sa1840 Renesas Electronics Corporation., 2sa1840 Datasheet - Page 2

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2sa1840

Manufacturer Part Number
2sa1840
Description
Pnp Silicon Epitaxial Transistor Darlington Connection For High-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
* Pulse test PW ≤ 350 µ s, Duty Cycle ≤ 2%
h
2
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Collector capacitance
FE
Marking
Electrode Connection
1. Base
2. Collector
3. Emitter
PACKAGE DRAWING (UNIT: mm)
CLASSIFICATION
h
FE1
Parameter
2,000 to 5,000
M
Symbol
V
V
h
h
CE(sat)
BE(sat)
I
I
4,000 to 10,000
C
t
CBO
EBO
FE1
FE2
t
stg
t
on
f
ob
*
*
*
*
L
V
V
V
V
I
I
I
R
Refer to the test circuit.
V
C
C
C
CB
EB
CE
CE
CB
L
= −2.0 A, I
= −2.0 A, I
= −2.0 A, I
= 25 Ω, V
= −100 V, I
= −5 V, I
= −2.0 V, I
= −2.0 V, I
= 10 V, I
Data Sheet D15589EJ2V0DS
8,000 to 20,000
TAPING SPECIFICATION
C
B
B
B1
E
CC
Conditions
= 0
= −2.0 mA
= −2.0 mA
= 0, f = 1 MHz
C
C
= −I
E
≅ −50 V
= −2.0 A
= −4.0 A
= 0
K
B2
= −2.0 mA
2,000
MIN.
500
TYP.
−0.9
−1.5
0.7
1.7
0.7
45
20,000
MAX.
−1.0
−5.0
−1.5
−2.0
Unit
mA
µ A
pF
µ s
µ s
µ s
V
V
2SA1840

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