2sa1412 Renesas Electronics Corporation., 2sa1412 Datasheet

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2sa1412

Manufacturer Part Number
2sa1412
Description
PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3????
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D18250EJ3V0DS00 (3rd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
(Previous No. TC-1635A)
DESCRIPTION
Hybrid Integrated Circuits.
FEATURES
• High Voltage: V
• High Speed: t
• Complement to 2SC3631-Z
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
The 2SA1412-Z is designed for High Voltage Switching, especially in
Collector to base voltage
Collector to emitter voltage
Base to emitter voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation (T
Junction temperature
Storage temperature
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2. When mounted on ceramic substrate of 7.5 cm
f
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
≤ 0.7
CEO
= −400 V
μ
Note 1
s
A
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
= 25°C)
Note 2
The mark <R> shows major revised points.
I
V
V
V
I
C(pulse)
C(DC)
T
P
T
CBO
CEO
EBO
stg
T
j
A
= 25°C)
−55 to +150
DATA SHEET
−400
−400
−2.0
−4.0
150
2.0
−7
2
× 0.7 mm
°C
°C
W
V
V
V
A
A
SILICON POWER TRANSISTOR
<R>
Note The depth of notch at the top of the fin is
2.3 ±0.3
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3Z)
from 0 to 0.2 mm.
2SA1412-Z
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
4
2.3 ±0.3
Note
0.5 ±0.1
1. Base
2. Collector
3. Emitter
4. Collector Fin
2.3 ±0.2
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
1985, 2006

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2sa1412 Summary of contents

Page 1

... PNP SILICON TRIPLE DIFFUSED TRANSISTOR DESCRIPTION The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES = −400 V • High Voltage: V CEO μ • High Speed: t ≤ 0 • Complement to 2SC3631-Z ABSOLUTE MAXIMUM RATINGS (T Collector to base voltage Collector to emitter voltage ...

Page 2

... Data Sheet D18250EJ3V0DS 2SA1412-Z ...

Page 3

... Data Sheet D18250EJ3V0DS 2SA1412-Z 3 ...

Page 4

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SA1412-Z Not all M8E 02. 11-1 ...

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