2sc5773jr-tl-e Renesas Electronics Corporation., 2sc5773jr-tl-e Datasheet

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2sc5773jr-tl-e

Manufacturer Part Number
2sc5773jr-tl-e
Description
Transistors Silicon Npn Epitaxial Uhf / Vhf Wide Band Amplifier Uhf / Vhf Wide Band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5773JR-TL-E
Manufacturer:
HITACHI/日立
Quantity:
20 000
2SC5773
Silicon NPN Epitaxial
UHF / VHF wide band amplifier
Features
Outline
Note: Marking is “JR-”.
Absolute Maximum Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* When using aluminum ceramic board (25 x 60 x 0.7 mm)
This data sheet contains tentative specification for new product development. It may partially be subject to change
without notice.
Rev.3.00 May 09, 2006 page 1 of 10
High gain bandwidth product
f
High power gain and low noise figure ;
PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz
T
= 10.8 GHz typ.
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
Item
3
Symbol
V
V
V
Tstg
Pc
CBO
CEO
EBO
I
Tj
C
2
1
–55 to +150
Ratings
700*
150
1.5
15
80
6
1. Emitter
2. Base
3. Collector
REJ03G0756-0300
May 09, 2006
Unit
mW
mA
V
V
V
(Ta = 25°C)
C
C
Rev.3.00

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2sc5773jr-tl-e Summary of contents

Page 1

Silicon NPN Epitaxial UHF / VHF wide band amplifier Features High gain bandwidth product f = 10.8 GHz typ. T High power gain and low noise figure ; PG = 11.9 dB typ 1.1 dB typ. at ...

Page 2

Electrical Characteristics Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Reverse transfer capacitance Gain bandwidth product S parameter 21 Power gain Noise figure Rev.3.00 May ...

Page 3

Main Characteristics Collector Power Dissipation Curve 800 When using aluminum ceramic board mm 0.7 mm 600 400 200 0 50 100 Ambient Temperature Collector Output Capacitance vs. Collector to Base Voltage ...

Page 4

Rev.3.00 May 09, 2006 page Parameter vs. Collector Current GHz Collector Current ...

Page 5

S11 Parameter vs. Frequency –.2 –.4 –.6 –.8 – Ω Condition 100 to 2000 MHz (100 MHz Step ...

Page 6

S11 Parameter vs. Frequency –.2 –.4 –.6 –.8 – Ω Condition 100 to 2000 MHz (100 MHz Step ...

Page 7

Sparameter S11 f (MHz) MAG ANG 100 0.643 -68.8 200 0.532 -112.2 300 0.496 -135.9 400 0.475 -150.6 500 0.471 -160.9 600 0.468 -168.0 700 0.468 -174.7 800 0.464 179.4 900 0.467 174.7 1000 0.465 169.9 1100 0.468 166.5 ...

Page 8

S11 f (MHz) MAG ANG 100 0.421 -130.8 200 0.437 -159.1 300 0.448 -169.5 400 0.449 -177.1 500 0.461 177.1 600 0.455 173.0 700 0.459 168.3 800 0.463 164.8 900 0.465 161.9 1000 0.464 158.2 1100 0.467 154.9 1200 ...

Page 9

S11 f (MHz) MAG ANG 100 0.447 -102.8 200 0.419 -142.1 300 0.416 -158.2 400 0.414 -168.7 500 0.421 -176.4 600 0.419 178.3 700 0.418 173.3 800 0.426 168.4 900 0.425 165.9 1000 0.423 161.7 1100 0.428 157.9 1200 ...

Page 10

... A-A Section Ordering Information Part Name 2SC5773JR-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 May 09, 2006 page Previous Code MASS[Typ.] MPAK(T) / MPAK(T)V 0.011g ...

Page 11

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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