bfp183trw Hope Microelectronics co., Ltd, bfp183trw Datasheet - Page 2
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bfp183trw
Manufacturer Part Number
bfp183trw
Description
Npn 8ghz Wideband Transistor
Manufacturer
Hope Microelectronics co., Ltd
Datasheet
1.BFP183TRW.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
bfp183trw-GS08
Manufacturer:
ROHM
Quantity:
27 083
Company:
Part Number:
bfp183trw-GS08--12
Manufacturer:
TEMIC
Quantity:
3 100
M A E183TRW
FEATURES
APPLICATION
For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.
Absolute Maximum Ratings
Tamb = 25℃, unless otherwise specified
THERMAL CHARACTERISTICS
Electrical DC Characteristics
Tamb =25℃,unless otherwise specified
Electrical AC Characteristics
Tel:+86-755-82973806
v
V
V
P
R
I
V
I
I
V
V
h
SYMBOL
SYMBOL
CBO
EBO
CES
SYMBOL
CBO
I
FE
CEO
EBO
tot
CEO
(BR)CEO
CEsat
Th j-s
C
For low noise,
high-gain broadband amplifiers at collector currents
High transition frequency fT = 8 GHz
Gold metallization ensures
excellent reliability
SOT-343R package
collector-base
voltage
collector-emitter
voltage
Emitter-base
voltage
collector current
(DC)
total power
dissipation
collector-base voltage
collector-emitter voltage
emitter-base voltage
Collector cut-off current
collector current (DC)
Collector-emitter saturation voltage
DC forward current transfer ratio
on glass fibre printed board (25 x 20 x 1.5)
mm3plated with 35um Cu
PARAMETER
Fax:+86-755-82973550
PARAMETER
PARAMETER
open emitter
open base
up to Ts=60℃; note1
E-mail:
CONDITIONS
Page 2 of 3
VCB=10V,IE=0
IC = 1 mA, IB = 0
VEB = 1 V, IC = 0
VCE = 15 V, VBE = 0
IC = 1 mA, IB = 0
IC = 30 mA, IB =3 mA
VCE = 6 V, IC = 5 mA
VCE = 8 V, IC = 20 mA
sales@hoperf.com
CONDITIONS
This item can replace BFP183TRW
up to Ts = 60℃;note 1
http://www.hoperf.com
CONDITIONS
-
-
-
-
MIN
-
-
-
-
-
-
50
50
MIN.
-
-
-
-
TYP.
-
-
-
-
10
0.1
90
110
TYP.
450 K/W
15
10
2
65
200
RESISTANCE
MAX.
10
1
100
-
0.4
100
150
-
MAX.
THERMAL
V
V
V
mA
mW
UNIT
nA
V
uA
uA
V
V
UNIT