si7852adp Vishay, si7852adp Datasheet

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si7852adp

Manufacturer Part Number
si7852adp
Description
N-channel 80-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73988
S-72676-Rev. A, 24-Dec-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
80
Ordering Information: Si7852ADP-T1-E3 (Lead (Pb)-free)
(V)
8
6.15 mm
D
7
0.017 at V
0.021 at V
D
6
r
DS(on)
D
PowerPAK SO-8
Bottom View
5
GS
D
GS
J
(Ω)
= 150 °C)
= 10 V
b, f
= 8 V
1
S
N-Channel 80-V (D-S) MOSFET
2
S
3
I
S
D
5.15 mm
30
30
(A)
4
G
d, e
a
A
= 25 °C, unless otherwise noted
Q
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
50
C
C
A
A
C
A
C
C
A
A
(Typ)
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Primary Side Switch
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
G
1.6
20
N-Channel MOSFET
- 55 to 150
9.7
4.5
3.2
Limit
12
± 20
62.5
5
260
30
30
30
80
60
30
45
40
b, c
D
S
b, c
b, c
b, c
b, c
a
a
a
Maximum
2.0
25
Vishay Siliconix
Si7852ADP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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si7852adp Summary of contents

Page 1

... Bottom View Ordering Information: Si7852ADP-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7852ADP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 73988 S-72676-Rev. A, 24-Dec-07 New Product 2500 2000 1500 1000 500 2.0 1.7 1 1.1 0.8 0 Si7852ADP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... Si7852ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.7 0.4 0.1 - 0.2 - 0.5 - 0.8 - 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0. °C J 0.06 0.04 0.02 0.00 0.8 1.0 1.2 200 160 120 250 µA ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7852ADP Vishay Siliconix 125 150 100 125 T - Case Temperature (°C) C Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7852ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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