si7904bdn Vishay, si7904bdn Datasheet

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si7904bdn

Manufacturer Part Number
si7904bdn
Description
Dual N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
si7904bdn-T1-E3
Manufacturer:
VISHAY
Quantity:
1 566
Company:
Part Number:
si7904bdn-T1-E3
Quantity:
70 000
Part Number:
si7904bdn-T1-GE3
Quantity:
3 823
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 94 °C/W.
Document Number: 74409
S-62481-Rev. A, 04-Dec-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
Ordering Information:
20
(V)
8
D1
3.30 mm
0.030 at V
0.036 at V
0.045 at V
7
D1
http://www.vishay.com/ppg?73257
r
DS(on)
6
D2
PowerPAK 1212-8
GS
GS
GS
Bottom View
5
Si7904BDN-T1-E3 (Lead (Pb)-free)
J
D2
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
= 150 °C)
b, f
Dual N-Channel 20-V (D-S) MOSFET
1
S1
2
G1
I
D
3
S2
(A)
6
6
6
Steady State
3.30 mm
t ≤ 10 sec
4
a
d, e
T
T
T
T
T
T
T
T
T
T
G2
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
C
C
C
C
C
A
A
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C
= 25 °C
= 25 °C
= 85 °C
= 25 °C
= 85 °C
New Product
Q
= 25 °C, unless otherwise noted
g
9 nC
(Typ)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• HDD Spindle Drive
G
Typical
1
5.6
40
N-Channel MOSFET
®
Power MOSFET
D
S
1
1
- 55 to 150
5.1
2.1
2.5
1.3
Limit
17.8
260
± 8
9.3
20
6
6
6
20
6
a
a
a
b, c
a
b, c
b, c
b, c
G
Maximum
2
N-Channel MOSFET
50
7
Vishay Siliconix
Si7904BDN
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
°C
W
V
A
1

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si7904bdn Summary of contents

Page 1

... Bottom View Ordering Information: Si7904BDN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7904BDN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 74409 S-62481-Rev. A, 04-Dec- thru 1.2 1 Si7904BDN Vishay Siliconix 125 ° ° °C 0 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 1200 C iss 900 600 300 C ...

Page 4

... Si7904BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.4 0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.7 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.060 0.050 0.040 °C J 0.030 0.020 0 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74409 S-62481-Rev. A, 04-Dec- 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- Si7904BDN Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www ...

Page 6

... Si7904BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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