si7960dp Vishay, si7960dp Datasheet
si7960dp
Manufacturer Part Number
si7960dp
Description
Dual N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI7960DP.pdf
(6 pages)
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Quantity
Price
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Part Number:
SI7960DP
Manufacturer:
VISHAY
Quantity:
500
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Part Number:
si7960dp-T1-E3
Manufacturer:
Vishay/Siliconix
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Part Number:
si7960dp-T1-E3
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SHARP
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15 000
Part Number:
si7960dp-T1-E3
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Quantity:
20 000
Company:
Part Number:
si7960dp-T1-GE3
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Vishay/Siliconix
Quantity:
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si7960dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 73075
S-41646—Rev. A, 06-Sep-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
60
60
(V)
J
8
D1
6.15 mm
ti
Ordering Information: Si7960DP-T1—E3
7
D1
t A bi
PowerPAK SO-8
6
D2
Bottom View
5
J
J
a
a
0.025 @ V
0.021 @ V
= 150_C)
= 150_C)
t
D2
a
a
Parameter
Parameter
r
DS(on)
Dual N-Channel 60-V (D-S) MOSFET
1
S1
a
a
GS
GS
(Ω)
2
= 4.5 V
= 10 V
G1
a
3
S2
5.15 mm
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t ≤ 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
9.7
8.9
(A)
G
1
Symbol
Symbol
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D Dual MOSFET for Space Savings
T
R
R
R
V
J
V
E
I
I
P
P
, T
DM
I
I
I
thJA
thJC
AS
DS
GS
D
D
AS
S
D
D
stg
D
S
1
1
10 secs
Typical
9.7
7.8
2.9
3.5
2.2
2.2
26
60
--55 to 150
20
G
60
40
23
27
2
Steady State
N-Channel MOSFET
Maximum
Vishay Siliconix
6.2
5.0
1.2
1.4
0.9
2.7
35
85
D
S
2
2
Si7960DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1
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