si7956dp Vishay, si7956dp Datasheet

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si7956dp

Manufacturer Part Number
si7956dp
Description
Dual N-channel 150-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7956dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72960
S-41071—Rev. A, 31-May-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
150
150
(V)
J
Ordering Information: Si7956DP-T1—E3
8
D1
6.15 mm
ti
7
D1
t A bi
PowerPAK SO-8
6
D2
Bottom View
5
J
J
a
a
0.105 @ V
= 150_C)
= 150_C)
t
0.115 @ V
a
a
D2
Parameter
Parameter
r
DS(on)
Dual N-Channel 150-V (D-S) MOSFET
1
a
a
S1
GS
GS
(W)
2
= 10 V
= 6 V
G1
a
3
S2
5.15 mm
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
4.1
3.9
(A)
G
1
Symbol
Symbol
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Low On-Resistance in New Low Thermal Resistance
D Dual MOSFET for Space Savings
D 100% R
APPLICATIONS
D High Efficiency Primary Side Switches
D Half Bridge and Forward Converters
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
AS
PowerPAKr Package
D
D
stg
D
S
1
1
g
Tested
10 secs
Typical
4.1
3.3
2.9
3.5
2.2
2.2
26
60
−55 to 150
"20
G
150
20
15
11
2
Steady State
N-Channel MOSFET
Maximum
Vishay Siliconix
2.6
2.1
1.2
1.4
0.9
2.7
35
85
D
S
2
2
Si7956DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1

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si7956dp Summary of contents

Page 1

... PowerPAK SO Bottom View Ordering Information: Si7956DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current ...

Page 2

... Si7956DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 72960 S-41071—Rev. A, 31-May-04 New Product 1500 1200 25_C J 0.8 1.0 1.2 Si7956DP Vishay Siliconix Capacitance C iss 900 600 300 C C oss rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...

Page 4

... Si7956DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 − Document Number: 72960 S-41071—Rev. A, 31-May-04 New Product −3 −2 10 Square Wave Pulse Duration (sec) Si7956DP Vishay Siliconix − www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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