ssm6n16fe TOSHIBA Semiconductor CORPORATION, ssm6n16fe Datasheet

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ssm6n16fe

Manufacturer Part Number
ssm6n16fe
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Speed Switching Applications
Analog Switching Applications
Absolute Maximum Ratings
(Q1, Q2 Common)
Marking
Handling Precaution
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Suitable for high-density mounting due to compact package
Low on resistance: R
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note:
Note 1: Total rating, mounted on FR4 board
6
1
D S
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm
Characteristics
5
2
: R
: R
0.3 mm
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
on
on
4
3
on
DC
Pulse
= 4.0 Ω (max) (@V
= 15 Ω (max) (@V
= 3.0 Ω (max) (@V
SSM6N16FE
(Ta = 25°C)
Equivalent Circuit
Symbol
P
V
V
D
T
I
T
GSS
I
DP
(Note 1)
DS
stg
D
ch
GS
GS
GS
= 1.5 V)
= 2.5 V)
= 4 V)
−55~150
Rating
6
1
±10
100
200
150
150
20
Q1
1
2
× 6)
5
2
Unit
mW
mA
Q2
°C
°C
V
V
4
3
JEDEC
JEITA
TOSHIBA
SSM6N16FE
2-2N1D
2007-11-01
Unit: mm

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ssm6n16fe Summary of contents

Page 1

... 1 (Ta = 25°C) Symbol Rating Unit ± GSS I 100 200 DP P (Note 1) 150 mW D °C T 150 ch −55~150 °C T stg 2 × 6) Equivalent Circuit SSM6N16FE JEDEC ― JEITA ― TOSHIBA 2-2N1D 4 3 2007-11-01 Unit: mm ...

Page 2

... mA 0~2 off ( OUT R L (c) V OUT V DD requires higher voltage than V GS (on) GS (off) 2 SSM6N16FE Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 20 ⎯ ⎯ 1 ⎯ 0.6 1.1 ⎯ ⎯ 40 ⎯ 1.5 3.0 ⎯ 2.2 4.0 ⎯ 5.2 15 ⎯ ...

Page 3

... Ta = 25° 100 1000 0 2 1.6 1.2 0.8 0.4 0 −25 100 125 150 3 SSM6N16FE I – Common source 100°C 25°C −25° Gate-Source voltage V GS (V) R – (ON) GS Common source 100°C 25°C −25°C ...

Page 4

... C iss 300 C oss C rss 100 100 10 0.1 2 × 6) 120 160 4 SSM6N16FE I – Common source 25° −0.2 −0.4 −0.6 −0.8 −1 −1.2 Drain-Source voltage V DS (V) t – Common source 0~2 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N16FE 20070701-EN GENERAL 2007-11-01 ...

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