ssm6n16fe TOSHIBA Semiconductor CORPORATION, ssm6n16fe Datasheet
ssm6n16fe
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ssm6n16fe Summary of contents
Page 1
... 1 (Ta = 25°C) Symbol Rating Unit ± GSS I 100 200 DP P (Note 1) 150 mW D °C T 150 ch −55~150 °C T stg 2 × 6) Equivalent Circuit SSM6N16FE JEDEC ― JEITA ― TOSHIBA 2-2N1D 4 3 2007-11-01 Unit: mm ...
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... mA 0~2 off ( OUT R L (c) V OUT V DD requires higher voltage than V GS (on) GS (off) 2 SSM6N16FE Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 20 ⎯ ⎯ 1 ⎯ 0.6 1.1 ⎯ ⎯ 40 ⎯ 1.5 3.0 ⎯ 2.2 4.0 ⎯ 5.2 15 ⎯ ...
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... Ta = 25° 100 1000 0 2 1.6 1.2 0.8 0.4 0 −25 100 125 150 3 SSM6N16FE I – Common source 100°C 25°C −25° Gate-Source voltage V GS (V) R – (ON) GS Common source 100°C 25°C −25°C ...
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... C iss 300 C oss C rss 100 100 10 0.1 2 × 6) 120 160 4 SSM6N16FE I – Common source 25° −0.2 −0.4 −0.6 −0.8 −1 −1.2 Drain-Source voltage V DS (V) t – Common source 0~2 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N16FE 20070701-EN GENERAL 2007-11-01 ...