ssm6k25fe TOSHIBA Semiconductor CORPORATION, ssm6k25fe Datasheet

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ssm6k25fe

Manufacturer Part Number
ssm6k25fe
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Speed Switching Applications
Absolute Maximum Ratings
Marking
Handling Precaution
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
Optimum for high-density mounting in small packages
Low on-resistance:
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board.
6
1
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
NH
Characteristics
5
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
4
3
DC
Pulse
R
R
R
on
on
on
= 395mΩ (max) (@V
= 190mΩ (max) (@V
= 145mΩ (max) (@V
Equivalent Circuit
SSM6K25FE
(Ta = 25°C)
Symbol
(Note 1)
V
V
T
I
T
GSS
I
DP
P
DS
stg
D
ch
D
6
1
GS
GS
GS
5
2
−55~150
= 1.8 V)
= 2.5 V)
= 4.0 V)
Rating
2
± 12
500
150
0.5
1.5
20
1
)
4
3
(top view)
Unit
mW
°C
°C
V
V
A
ES6
Weight: 3.0 mg (typ.)
JEDEC
JEITA
TOSHIBA
1,2,5,6 :Drain
3 :Gate
4 :Source
1
2
3
SSM6K25FE
1.6±0.05
1.2±0.05
2-2N1A
2007-11-01
Unit: mm
6
5
4

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ssm6k25fe Summary of contents

Page 1

... 500 (Note 1) T 150 ch −55~150 T stg 2 ) Equivalent Circuit (top view SSM6K25FE 1.6±0.05 1.2±0. Unit 1,2,5,6 :Drain 3 :Gate mW 4 :Source °C °C ES6 JEDEC ― JEITA ― TOSHIBA 2-2N1A Weight: 3.0 mg (typ.) 2007-11-01 Unit ...

Page 2

... 0~2 4.7 Ω off ( OUT (c) V OUT V DD requires a higher voltage than V GS (on) < V < (off (on) 2 SSM6K25FE Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 20 ⎯ ⎯ 10 ⎯ ⎯ 1 ⎯ 0.5 1.1 ⎯ (Note2) 1.2 2.4 ⎯ (Note2) 125 145 ⎯ ...

Page 3

... Ambient temperature Ta (°C) 10000 1.6 1000 100 VGS=1.4V 10 0.1 0.01 0.8 1 400 350 300 250 200 150 100 0.8 0.6 1.8V 2.5V 0.4 VGS=4V 0.2 3 SSM6K25FE ID - VGS Ta=100°C 1 25°C -25°C Common Source VDS= Gate-Source voltage VGS (V) RDS(ON) - VGS Common Source ID=250mA 25° Gate-Source voltage VGS (V) ...

Page 4

... Ambient temperature Ta( ℃ ) 1600 1400 1200 1000 800 600 400 200 0 10000 1000 Ciss 100 10 Coss Crss 1 100 ) 2 140 160 4 SSM6K25FE IDR - VDS Common Source VGS=0V Ta=25° IDR S 0 -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS ( Common Source VDD=10V VGS=0 ~ 2.5V Ta=25°C toff tf ton tr ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6K25FE 20070701-EN GENERAL 2007-11-01 ...

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