ssm6l12tu TOSHIBA Semiconductor CORPORATION, ssm6l12tu Datasheet

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ssm6l12tu

Manufacturer Part Number
ssm6l12tu
Description
Toshiba Field Effect Transistor Silicon P/n Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSM6L12TU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High Speed Switching Applications
Q1 Absolute Maximum Ratings
Q2 Absolute Maximum Ratings
Absolute Maximum Ratings
(Ta = 25°C)
Marking
Handling Precaution
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
Optimum for high-density mounting in small packages
Low on-resistance
Drain-Source voltage
Gate-Source voltage
Drain current
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board. (total dissipation)
6
1
K9
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
5
2
Characteristics
Characteristics
Characteristics
4
3
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
Q1: R
Q2: R
DC
Pulse
DC
Pulse
on
on
= 180mΩ (max) (@V
= 430mΩ (max) (@V
SSM6L12TU
(Q1,Q2 Common)
Symbol
Symbol
Symbol
(Note 1)
V
V
V
V
T
I
I
T
GSS
GSS
I
DP
I
DP
P
DS
DS
stg
(Ta = 25°C)
D
(Ta = 25°C)
D
ch
D
Equivalent Circuit
GS
GS
−55~150
6
1
Rating
Rating
Rating
Q1
± 12
± 12
-0.5
-1.5
500
150
= 2.5 V)
= -2.5 V)
0.5
1.5
-20
2
30
1
)
5
2
Q2
4
3
Unit
Unit
Unit
mW
°C
°C
V
V
A
V
V
A
(top view)
UF6
Weight: 7.0 mg (typ.)
JEDEC
JEITA
TOSHIBA
1.Source1
2.Gate1
3.Drain2
1
2
3
SSM6L12TU
2.1±0.1
1.7±0.1
2-2T1B
4.Source2
5.Gate2
6.Drain1
2007-11-01
Unit: mm
6
5
4

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ssm6l12tu Summary of contents

Page 1

... Unit P D 500 mW (Note 1) °C T 150 ch −55~150 °C T stg 2 ) Equivalent Circuit (top view SSM6L12TU Unit: mm 2.1±0.1 1.7±0 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 UF6 JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight: 7.0 mg (typ.) 2007-11-01 ...

Page 2

... 4.7 Ω off ( OUT (c) V OUT (ON) requires a higher voltage than V GS (on) < V < (off (on) 2 SSM6L12TU Min Typ. Max Unit ⎯ ⎯ ±1 ⎯ ⎯ 30 ⎯ ⎯ 18 ⎯ ⎯ 1 ⎯ 0.5 1.1 ⎯ (Note2) 1.0 2.0 ⎯ (Note2) ...

Page 3

... OUT R −2 ( OUT DS (ON requires a higher voltage than V GS (on) < V < (off (on) 3 SSM6L12TU Min Typ. Max Unit ⎯ ⎯ ±1 μA ⎯ ⎯ -20 V ⎯ ⎯ -8 ⎯ ⎯ μA -1 ⎯ -0.5 -1.1 V ⎯ ...

Page 4

... Ambient temperature Ta (°C) 10000 1.6 1000 100 VGS=1.4V 10 0.1 0.01 0.8 1 400 350 300 250 200 150 100 0.8 0.6 2.5V,250mA 0.4 0.2 4 SSM6L12TU ID - VGS Ta=100°C 25°C 1 -25°C Common Source VDS= Gate-Source voltage VGS (V) RDS(ON) - VGS Common Source ID=500mA 25°C Ta=100°C -25° ...

Page 5

... Drain-Source voltage VDS (V) 1600 1400 1200 1000 1000 10000 1000 Common Source VGS=0V f=1MHz Ta=25°C Ciss Coss Crss 10 100 5 SSM6L12TU IDR - VDS Common Source VGS=0V Ta=25°C D IDR G 800 S 600 400 200 0 0 -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS ( Common Source VDD=10V VGS=0 ~ 2.5V Ta=25° ...

Page 6

... VGS=-1.6 - 0.1 - 0.01 -0 500 400 300 200 100 0 -1200 -1400 -1600 -1 -0.8 -2.5V -0.6 VGS=-4V -0.4 -0.2 6 SSM6L12TU ID - VGS Ta=100°C 25° -25°C Common Source VDS=- Gate-Source voltage VGS (V) RDS(ON) - VGS Common Source ID=-250mA Ta=100°C 25°C -25° Gate-Source voltage VGS (V) ...

Page 7

... Ciss 100 10 Coss Crss 1 -100 ) 2 120 140 160 7 SSM6L12TU IDR - VDS Common Source VGS=0V Ta=25°C 0.0 0.2 0.4 0.6 0.8 Drain-Source voltage VDS ( Common Source VDD=-10V VGS=0 ~- 2.5V Ta=25°C toff tf ton tr -10 -100 -1000 Drain current ID (mA) 2007-11-01 1 ...

Page 8

... Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1 Pad: 645 mm 100 10 1 0.001 0.01 0.1 Pulse width t r – 100 ( SSM6L12TU 1000 2007-11-01 ...

Page 9

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 SSM6L12TU 20070701-EN GENERAL 2007-11-01 ...

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