ssm3k15fv TOSHIBA Semiconductor CORPORATION, ssm3k15fv Datasheet

ssm3k15fv

Manufacturer Part Number

ssm3k15fv

Description

Toshiba Field Effect Transistor Silicon N Channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM3K15FV.pdf (5 pages)

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High Speed Switching Applications

Analog Switch Applications

Optimum for high-density mounting in small packages

•

Absolute Maximum Ratings

Marking

Handling Precaution

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

Low on-resistance

: R

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation (Ta = 25°C)

Channel temperature

Storage temperature

Note:

Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t)

= 4.0 Ω (max) (@V

= 7.0 Ω (max) (@V

D P

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

0.5mm

0.4mm

Pulse

= 4 V)

= 2.5 V)

0.45mm

SSM3K15FV

(Ta = 25°C)

Equivalent Circuit

Symbol

GSS

(Note 1)

stg

−55~150

Rating

±20

100

200

150

Unit

°C

Weight: 0.0015 g (typ.)

JEDEC

JEITA

TOSHIBA

VESM

1. Gate

2. Source

3. Drain

SSM3K15FV

1.2±0.05

0.8±0.05

2-1L1B

2007-11-01

Unit: mm

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