ssm3k128tu TOSHIBA Semiconductor CORPORATION, ssm3k128tu Datasheet

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ssm3k128tu

Manufacturer Part Number
ssm3k128tu
Description
Toshiba Field-effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
○ High-Speed Switching Applications
○ Power Management Switch Applications
Absolute Maximum Ratings (Ta = 25˚C)
Electrical Characteristics
4.0V drive
Low ON-resistance : R
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note 1: Mounted on an FR4 board
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Drain-source forward voltage
Note 2:Pulse test
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
: R
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
on
on
= 217mΩ (max) (@V
= 360mΩ (max) (@V
Pulse
DC
(Ta = 25°C)
SSM3K128TU
P
V
R
D
Symbol
Symbol
(BR) DSS
DS (ON)
V
V
⏐Y
V
I
I
C
C
T
C
GSS
I
T
DSS
Q
Q
V
GSS
t
t
DSS
(Note1)
Q
DSF
I
DP
oss
on
off
stg
rss
D
ch
iss
th
fs
gs
gd
g
GS
GS
I
V
V
V
V
I
I
V
V
V
V
V
I
= 10V)
= 4.0V)
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
= 1 mA, V
= 0.6 A, V
= 0.6 A, V
= -1.5 A, V
2
−55~150
)
 = ±16 V, V
Rating
= 30 V, V
= 5 V, I
= 5 V, I
= 15 V, V
= 15 V, I
= 10 V
= 15 V, I
= 0~4.0 V, R
±20
500
150
1.5
3.0
30
1
Test Condition
D
D
GS
GS
GS
GS
D
D
= 1 mA
= 0.6 A
GS
GS
= 0.6 A,
= 1.5 A
= 0 V
= 10 V
= 4.0 V
= 0 V
DS
= 0 V
= 0 V, f = 1 MHz
G
= 10 Ω
Unit
= 0 V
mW
°C
°C
V
V
A
(Note2)
(Note2)
(Note2)
(Note2)
Weight: 6.6mg (typ.)
JEDEC
JEITA
TOSHIBA
UFM
0.73
Min
1.1
30
1
2
SSM3K128TU
-0.85
Typ.
1.45
12.0
160
260
2.8
1.6
1.2
6.9
57
33
12
2.1±0.1
1.7±0.1
2-2U1A
1.
2.
3.
2007-06-06
Max
217
360
-1.2
2.6
±1
1
Gate
Source
Drain
UNIT: mm
3
Unit
nC
μA
μA
pF
ns
V
V
S
V

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ssm3k128tu Summary of contents

Page 1

... 0 0~4 Ω off = -1 DSF SSM3K128TU UNIT: mm 2.1±0.1 1.7±0 Gate 2. Source UFM 3. Drain JEDEC ― JEITA ― 2-2U1A TOSHIBA Weight: 6.6mg (typ.) Min Typ. Max Unit ⎯ ...

Page 2

... G D.U. < < Common Source (c) V OUT Ta = 25°C Equivalent Circuit (top view requires a higher voltage than V GS (on) GS (off) 2 SSM3K128TU 4.0 V 90% 10 90% 10 (ON off = 1 mA for D and V requires a lower th GS (off) < ...

Page 3

... Gate-source voltage V 800 Common Source Ta = 25°C 600 400 4.0V 200 25 °C VGS = 10 V − 25 ° 3.0 2.0 1.0 0 −50 150 Ambient temperature Ta (°C) 3 SSM3K128TU I – 100 °C − 25 °C 25 ° ( – (ON Drain current I (A) ...

Page 4

... S 0.1 Ta =100 °C 0.01 0.001 10 0 Drain-source voltage V 1000 t off 100 iss C oss rss 100 0.01 ( SSM3K128TU I – °C −25 °C -0.5 -1.0 -1.5 ( – Common Source ∼ 4 ° Ω 0 ...

Page 5

... Mounted on ceramic board (25.4mm × 25.4mm × 0. Pad : 645 mm b: Mounted on FR4 board (25.4mm × 25.4mm × 1. Pad : 645 mm 800 a 600 b 400 2 200 ) ×3) 0 -50 100 600 Ambient temperature T 5 SSM3K128TU P – 100 150 (°C) a 2007-06-06 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3K128TU 20070701-EN 2007-06-06 ...

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