ssm3j108tu TOSHIBA Semiconductor CORPORATION, ssm3j108tu Datasheet

ssm3j108tu

Manufacturer Part Number

ssm3j108tu

Description

Field Effect Transistor Silicon P-channel Mos Type High Speed Switching Applications

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM3J108TU.pdf (5 pages)

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High Speed Switching Applications

•

Absolute Maximum Ratings

Electrical Characteristics

1.8V drive

Low on-resistance:

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note:

Note 1: Mounted on ceramic board.

Note 2: Mounted on FR4 board.

Drain-Source breakdown voltage

Drain cut-off current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain-Source on-resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Switching time

Drain-Source forward voltage

Note3: Pulse test

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

Characteristic

Turn-on time

Turn-off time

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type

Pulse

= 363mΩ (max) (@V

= 230mΩ (max) (@V

= 158mΩ (max) (@V

(Ta = 25°C)

SSM3J108TU

(Ta = 25°C)

Symbol

(BR) DSS

(BR) DSX

Symbol

D (Note 1)

D (Note 2)

⏐Y

DS (ON)

DSS

GSS

DSF

oss

off

GSS

rss

iss

stg

⏐

= −1 mA, V

= −0.8 A, V

= −0.4 A, V

= −0.1 A, V

= 1.8A, V

= −20 V, V

= −3 V, I

= −10 V, V

= −10 V, I

−55~150

= ±8V, V

= 0~−2.5 V, R

= −1.8 V)

= −2.5 V)

= −4.0 V)

Rating

−1.8

−3.6

−20

800

500

150

± 8

)

Test Conditions

= −1 mA

=− 0.8 A

= 0 V

= −0.25 A,

= 0

= +8 V

= −4.0 V

= −2.5 V

= −1.8 V

= 0

= 0, f = 1 MHz

= 4.7 Ω

Unit

°C

(Note3)

Weight: 6.6 mg (typ.)

JEDEC

JEITA

TOSHIBA

UFM

−0.3

Min

−20

−12

1.9

⎯

1: Gate

2: Source

3: Drain

Typ.

0.85

SSM3J108TU

125

170

230

250

3.2

⎯

2.1±0.1

1.7±0.1

2-2U1A

2007-11-01

―

Max

−1.0

−10

158

230

363

1.2

⎯

±1

⎯

Unit: mm

Unit

mΩ

μA

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ssm3j108tu Summary of contents

Page 1

... − −0. 0~−2 4.7 Ω off = 1.8A DSF SSM3J108TU 2.1±0.1 1.7±0 Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Min Typ. Max −20 ⎯ −12 ⎯ ...

... V IN OUT OUT V Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on) 2 SSM3J108TU 0 V 10% 90% −2 (ON) 90% 10 off D and V requires a lower th, GS (off) ) 2007-11-01 f =−1mA for ...

Page 3

... SSM3J108TU ID - VGS Ta=85°C 25°C -25°C Common Source VDS=- Gate-Source voltage VGS (V) RDS(ON -1.8V,-0.1A -2.5V,-0.4A VGS=-4V,ID=-0. 100 120 140 160 Ambient temperature Ta( ℃ ) Vth - Ta Common Source ID=-1mA ...

Page 4

... Ciss 100 tf ton 10 Coss tr Crss 1 100 -0.01 1000 100 10 1 0.001 0.01 4 SSM3J108TU IDR - VDS 25°C -25°C Ta=85°C 0.2 0.4 0.6 0.8 1 Drain-Source voltage VDS ( Common Source VDD=10V VGS=0 to 2.5V Ta=25°C -0.1 -1 -10 Drain current ID (A) Rth - Single pulse a:Mounted on ceramic board (25.4mm× ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J108TU 20070701-EN GENERAL 2007-11-01 ...

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ssm3j108tu TOSHIBA Semiconductor CORPORATION, ssm3j108tu Datasheet

ssm3j108tu

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ssm3j108tu Summary of contents

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