nxb0102 NXP Semiconductors, nxb0102 Datasheet - Page 16

• Manufacturer Part Number: nxb0102
• Description: Dual Supply Translating Transceiver; Auto Direction Sensing; 3-state
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NXB0102
Product data sheet
Fig 9.
Architecture of NXB0102 I/O cell (one channel)
13.2 Architecture
The architecture of the NXB0102 is shown in
extra input signal to control the direction of data flow from A to B or from B to A. In a static
state, the output drivers of the NXB0102 can maintain a defined output level, but the
output architecture is designed to be weak, so that they can be overdriven by an external
driver when data on the bus starts flowing in the opposite direction. The output of one-shot
circuits detect rising or falling edges on the A or B ports. During a rising edge, the
one-shot circuits turn on the PMOS transistors (T1, T3) for a short duration, accelerating
the LOW-to-HIGH transition. Similarly, during a falling edge, the one-shot circuits turn on
the NMOS transistors (T2, T4) for a short duration, accelerating the HIGH-to-LOW
transition. During output transitions the typical output impedance is 70 Ω at V
to 1.8 V, 50 Ω at V
A
V
CC(A)
All information provided in this document is subject to legal disclaimers.
Dual supply translating transceiver; auto direction sensing; 3-state
CCO
T3
T4
4 kΩ
= 1.8 V to 3.3 V and 40 Ω at V
Rev. 01 — 8 June 2010
SHOT
SHOT
ONE
ONE
SHOT
SHOT
ONE
ONE
4 kΩ
T1
T2
Figure
V
CC(B)
001aal921
9. The device does not require an
CCO
B
= 3.3 V to 5.0 V.
NXB0102
© NXP B.V. 2010. All rights reserved.
CCO
= 1.2 V
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