auirlu3114z International Rectifier Corp., auirlu3114z Datasheet - Page 2

• Manufacturer Part Number: auirlu3114z
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.


‚
ƒ
„
Notes:
Static Electrical Characteristics @ T
V
ΔV
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
R
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
same charging time as C
from 0 to 80% V
2
recommended for use above this value.
(BR)DSS
G
oss
eff.
= 25Ω, I
eff. is a fixed capacitance that gives the
/ΔT
AS
J
Jmax
= 42A, V
DSS
, starting T
.
GS
oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
=10V. Part not
J
while V
= 25°C, L = 0.15mH
Parameter
DS
is rising
Parameter
™
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
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–––
–––
…
†
‡
ˆ
‰
1.0
40
98
Limited by T
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material).
Calculated continuous current based on maximum allowable
junction temperature. Package limitation is 42A.
avalanche performance.
θ
0.032
3810
2390
Typ.
Typ.
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–––
–––
140
650
350
580
820
–––
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–––
3.9
5.2
4.5
7.5
40
12
18
25
33
50
30
27
Jmax
42
Max. Units
Max. Units
-100
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250
100
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500
4.9
6.5
2.5
1.3
20
56
45
41
k
, see Fig.12a, 12b, 15, 16 for typical repetitive
V/°C
mΩ
μA
nA
nC
nH
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 42A
= 42A
= 25°C, I
= 25°C, I
= 3.7Ω
= V
= 10V, I
= 40V, V
= 40V, V
= 20V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V
= 20V
= 4.5V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
S
F
D
DS
D
D
DS
DS
Conditions
= 250μA
Conditions
D
GS
GS
= 42A, V
= 42A, V
= 100μA
= 42A
= 42A
= 0V to 32V
= 42A
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
e
D
e
e
GS
DD
= 1mA
J
www.irf.com
G
= 125°C
= 0V
= 20V
f
G
e
S
D
S
D