2sd1007 GUANGDONG KEXIN INDUSTRIAL CO.,LTD, 2sd1007 Datasheet

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2sd1007

Manufacturer Part Number
2sd1007
Description
Npn Silicon Epitaxial Transistor
Manufacturer
GUANGDONG KEXIN INDUSTRIAL CO.,LTD
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1007
Manufacturer:
NEC
Quantity:
20 000
Part Number:
2sd1007-T1
Manufacturer:
NEC
Quantity:
130 000
Part Number:
2sd1007-T1
Manufacturer:
NEC
Quantity:
20 000
SMD Type
Base-emitter voltage *
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Output capacitance
Transition frequency
*. PW 350ìs,duty cycle 2%
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector power dissipation
Junction temperature
Storage temperature
*. PW 10ms,duty cycle 50%
h
Electrical Characteristics Ta = 25
High collector to emitter voltage: V
Features
Absolute Maximum Ratings Ta = 25
FE
Marking
hFE
Classification
Parameter
90 180
HR
Parameter
NPN Silicon Epitaxial Transistor
CEO
135 270
HQ
120V.
Symbol
V
V
200 400
I
I
CE(sat)
BE(sat)
V
C
h
CBO
EBO
f
FE
BE
ob
T
2SD1007
HP
Symbol
V
V
I
V
V
V
V
V
I
I
V
V
V
C (pu)
C
C
T
P
CE
CB
EB
CE
CE
CB
CE
CBO
CEO
EBO
I
T
stg
C
= 500mA , I
= 500mA , I
c
j
= 5V, I
=10V , I
= 120V, I
=1V , I
=1V , I
= 10V , I
= 10V , I
C
C
C
=0
C
Testconditons
= 5.0mA
= 100mA
E
E
E
-55 to +150
B
B
= 10mA
=0
= 0 , f = 1.0MHz
= -10mA
= 50mA
= 50mA
Rating
120
120
150
0.7
1.2
5
2
Unit
W
V
V
V
A
A
Min
550
45
90
www.kexin.com.cn
Transistors
Typ
620
200
200
0.3
0.9
10
90
Max
650
100
100
400
0.6
1.5
MHz
Unit
mV
nA
nA
pF
V
V
1

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