m52s32321a Elite Semiconductor Memory Technology Inc., m52s32321a Datasheet
m52s32321a
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m52s32321a Summary of contents
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... PIN CONFIGURATION (TOP VIEW) Elite Semiconductor Memory Technology Inc. GENERAL DESCRIPTION The M52S32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized 524,288 words by 32 bits, fabricated Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...
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... Enables column access. Enables write operation and row precharge. Latches data in starting from CAS , WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when L(U)DQM active. M52S32321A LWE LDQM 512K x 32 512K x 32 Column Decoder ...
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... OL ≤ 3ns acceptable. ≤ 3ns acceptable all other pins are not under test = 0V. DDQ ≤ OUT DDQ = 1MHz) ° Symbol C CLK ADD C OUT M52S32321A Value -1.0 ~ 3.6 -1.0 ~ 3.6 - 150 0.7 50 ° C ° Typ Max Unit 2.5 2.7 V 2.5 V +0.3 V DDQ 0 0 ...
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... CKE V (min), CLK V (max Input signals are stable mA, Page Burst OL All Band Activated, tCCD = tCCD (min) ≥ (min TCSR range ≤ CKE 0.2V ≤ CKE 0.2V M52S32321A ° Version -6 -7.5 100 80 0.3 ∞ = 0.2 =15ns 9 ∞ ∞ 1 =15ns 15 ∞ = ...
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... RCD t (min (min) 36 RAS t (max) RAS t (min (min) CDL t (min) RDL t (min) BDL t (min) CCD t (max) REF CAS latency=3 CAS latency=2 M52S32321A Unit / 0 DDQ ns V DDQ Version Unit -7 100 us 67 CLK 2 CLK ...
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... 2 1 SLZ - 6 t SHZ - 6 *All AC parameters are measured from half to half. -6 Symbol Unit Min Max - 5 SAC - 5 5 SHZ - 5.5 M52S32321A -7.5 -10 Max Min Max 9 1000 1000 Note Publication Date : Jan. 2009 Revision : 1 ...
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... Reserved Reserved Reserved Reserved Reserved M52S32321A Burst Length Burst Length Type Sequential Interleave Reserved Reserved ...
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... ATCSR 0 0 Elite Semiconductor Memory Technology Inc TCSR PASR PASR DS ATCSR M52S32321A A0 Address bus Extended Mode Register A2-0 Self Refresh Coverage 000 Full Array 001 1/2 of Full Array 010 1/4 of Full Array 011 Reserved 100 Reserved 101 Reserved 110 ...
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... M52S32321A Interleave Addressing Sequence (decimal Interleave Addressing Sequence (decimal ...
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... Entry Exit Entry Exit (V= Valid, X= Don’t Care, H= Logic High , L = Logic Low) after the end of burst. RP M52S32321A DQM BA A10/AP A9~A0 Note RAS CAS ...
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... *Note M52S32321A *Note2,3 *Note4 *Note2 *Note 3 *Note4 ...
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... Enable auto precharge, precharge bank A at end of burst. 1 Enable auto precharge, precharge bank B at end of burst. 4.A10/AP and BA control bank precharge when precharge command is asserted. A10/AP BA precharge 0 0 Bank Bank Both Banks Elite Semiconductor Memory Technology Inc. Operation M52S32321A Publication Date : Jan. 2009 Revision : 1.5 12/29 ...
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... Elite Semiconductor Memory Technology Inc M52S32321A Publication Date : Jan ...
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... Qa1 Qa2 Qa3 Qa0 Qa1 Qa2 Qa3 Precharge (A- Bank) ) after the clock. SHZ +CAS latency-1)+t RCD M52S32321A Cb0 Rb Db1 Db2 Db0 *Note4 Db0 Db2 Db1 *Note4 Row Active W r ite ...
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... HIGH Cb0 Qa0 Qb0 Qb1 Qb2 Qa1 Qa1 Qb0 Qb1 Qa0 *Note1 Read (A-Bank) before Row precharge, will be written. RDL M52S32321A *Note2 Cc0 Cd0 t RDL Dc0 Dc1 Dd1 Dd0 Dc0 Dc1 Dd0 Dd2 t CDL *Note3 ...
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... HIGH RBb CBb RBb QAa0 QAa1 QAa2 QAa3 QBb0 QAa0 QAa1 QAa3 QAa2 Read (B-Bank) Row Active (B-Bank) M52S32321A CAc CBd CAe QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QBb1 QBb0 QBb2 QBb3 QAc0 QAc1 QBd0 ...
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... Elite Semiconductor Memory Technology Inc HIGH CBb RBb RBb DBb2 DBb3 DAa1 DAa2 DAa3 DBb0 DBb1 t CDL Write (B-Bank) (B-Bank) M52S32321A *Note2 CAc CBd DAc0 DAc1 DBd0 DBd1 t RDL *Note1 Precharge Write (Both Banks) (A-Bank) Write (B-Bank) Publication Date : Jan ...
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... ESMT Read & Write Cycle at Different Bank @ Burst Length = 4 *Note: 1.t should be met to complete write. CDL Elite Semiconductor Memory Technology Inc. M52S32321A Publication Date : Jan. 2009 Revision : 1.5 18/29 ...
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... Read with Auto Precharge Auto Precharge Start Point ( A - Bank ) ( A - Bank) before internal precharge start RAS M52S32321A ...
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... Elite Semiconductor Memory Technology Inc M52S32321A ...
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... *Note2 M52S32321A ...
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... Elite Semiconductor Memory Technology Inc M52S32321A Publication Date : Jan ...
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... Row Active (B-Bank) Read with Auto Precharge (A-Bank) M52S32321A * ...
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... Row Active Precharge Active Power-Down Power-down Exit Entry M52S32321A Read Active Power-down Exit Publication Date : Jan. 2009 Revision : 1 ...
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... Elite Semiconductor Memory Technology Inc *Note3 RAS M52S32321A ...
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... CS , RAS , CAS & WE activation at the same clock cycle with address key will set internal mode register. 2.Minimum 2 clock cycles should be met before new RAS activation. 3.Please refer to Mode Register Set table. Elite Semiconductor Memory Technology Inc. Auto Refresh Cycle M52S32321A ...
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... Controlling dimension : Millimeter. Elite Semiconductor Memory Technology Inc. Dimension in mm Min Norm Max Min 1.40 0.30 0.40 0.012 0.84 0.89 0.94 0.033 0.40 0.50 0.016 7.90 8.00 8.10 0.311 12.90 13.00 13.10 0.508 6.40 11.20 0.80 M52S32321A Dimension in inch Norm Max 0.055 0.016 0.035 0.037 0.020 0.315 0.319 0.512 0.516 0.252 0.441 0.031 Publication Date : Jan. 2009 Revision : 1.5 27/29 ...
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... Modify the test condition Add the specification Modify the description about self refresh operation 2009.01.08 5. Modify the specification of t speed grade -6 6. Modify the specification Add the description about A9 bit of MRS M52S32321A Description OL and ICC3N IL REF (max) and t (max) for ...
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... If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Important Notice M52S32321A Publication Date : Jan. 2009 Revision : 1.5 29/29 ...