hn58v66at-10e Renesas Electronics Corporation., hn58v66at-10e Datasheet

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hn58v66at-10e

Manufacturer Part Number
hn58v66at-10e
Description
64 K Eeprom 8-kword ? 8-bit Ready/busy Function, Res Function Hn58v66a
Manufacturer
Renesas Electronics Corporation.
Datasheet
HN58V65A Series
HN58V66A Series
64 k EEPROM (8-kword
Ready/Busy Function, RES Function (HN58V66A)
Description
Renesas Technology
programmable EEPROM’s organized as 8192-word
consumption and high relisbility by employing advanced MNOS memory technology and CMOS process
and circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
Rev.3.00, Dec. 04.2003, page 1 of 26
Single supply: 2.7 to 5.5 V
Access time:
Power dissipation:
Active: 20 mW/MHz (typ)
Standby: 110 W (max)
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (64 bytes): 10 ms (max)
Ready/Busy
Data polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
100 ns (max) at 2.7 V
70 ns (max) at 4.5 V
's
HN58V65A series and HN58V66A series are a electrically erasable and
V
V
CC
CC
< 4.5 V
5.5 V
8-bit)
8-bit. They have realized high speed, low power
(Previous ADE-203-539B (Z) Rev. 2.0)
REJ03C0149-0300Z
Dec. 04. 2003
Rev. 3.00

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hn58v66at-10e Summary of contents

Page 1

HN58V65A Series HN58V66A Series 64 k EEPROM (8-kword Ready/Busy Function, RES Function (HN58V66A) Description 's Renesas Technology HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word consumption and high relisbility by employing advanced MNOS ...

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... HN58V66AT-10 100 ns HN58V65AP-10E 100 ns HN58V66AP-10E 100 ns HN58V65AFP-10E 100 ns HN58V66AFP-10E 100 ns HN58V65AT-10E 100 ns HN58V66AT-10E 100 ns Rev.3.00, Dec. 04.2003, page and are also available. 4 5.5 V Package 600 mil 28-pin plastic DIP (DP-28 400 mil 28-pin plastic SOP (FP-28D) ...

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HN58V65A Series, HN58V66A Series Pin Arrangement HN58V65AP Series HN58V65AFP Series Busy RDY/ 1 A12 I/O0 11 I/ ...

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... I/O3 23 I/O4 24 I/O5 25 I/ A10 Rev.3.00, Dec. 04.2003, page HN58V65AT Series (Top view) HN58V66AT Series (Top view A12 Busy RDY A11 ...

Page 5

HN58V65A Series, HN58V66A Series Pin Description Pin name A0 to A12 I/ RDY/Busy RES Note: 1. This function is supported by only the HN58V66A series. Block Diagram Note: 1. ...

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HN58V65A Series, HN58V66A Series Operation Table Operation Read Standby Write Deselect Write Inhibit V Data Polling Program ...

Page 7

HN58V65A Series, HN58V66A Series DC Characteristics ( Parameter Symbol Input leakage current I LI Output leakage current I LO Standby V curren I CC CC1 I CC2 Operating V current I CC CC3 ...

Page 8

HN58V65A Series, HN58V66A Series AC Characteristics ( Test Conditions Input pulse levels : 0 2 Input rise and fall time : 5 ns Input ...

Page 9

HN58V65A Series, HN58V66A Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE ...

Page 10

HN58V65A Series, HN58V66A Series Read Cycle Parameter Symbol Min Address to output delay t ACC CE to output delay output delay t OE Address to output hold t OH ...

Page 11

HN58V65A Series, HN58V66A Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE ...

Page 12

HN58V65A Series, HN58V66A Series Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out RES 2 * Rev.3.00, Dec. 04.2003, page ACC Data out valid ...

Page 13

HN58V65A Series, HN58V66A Series Byte Write Timing Waveform(1) (WE Controlled) Address Din High-Z Busy RDY/ t RES RES Rev.3.00, Dec. 04.2003, page ...

Page 14

HN58V65A Series, HN58V66A Series Byte Write Timing Waveform(2) (CE Controlled) Address Din High-Z Busy RDY/ t RES RES Rev.3.00, Dec. 04.2003, page ...

Page 15

HN58V65A Series, HN58V66A Series Page Write Timing Waveform(1) (WE Controlled) *7 Address A0 to A12 OES Din t DB Busy ...

Page 16

HN58V65A Series, HN58V66A Series Page Write Timing Waveform(2) (CE Controlled) *8 Address A0 to A12 OES Din t DB Busy ...

Page 17

HN58V65A Series, HN58V66A Series Data Polling Timing Waveform Data Data Data Address OEH Din X I/O7 Rev.3.00, Dec. 04.2003, page Dout ...

Page 18

HN58V65A Series, HN58V66A Series Toggle Bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each ...

Page 19

HN58V65A Series, HN58V66A Series Software Data Protection Timing Waveform(1) (in protection mode Address 1555 0AAA Data AA 55 Software Data Protection Timing Waveform(2) (in non-protection mode Address 1555 0AAA Data AA 55 ...

Page 20

HN58V65A Series, HN58V66A Series Functional Description Automatic Page Write Page-mode write feature allows bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional ...

Page 21

HN58V65A Series, HN58V66A Series WE Pin Operation During a write cycle, addresses are latched by the falling edge CE, and data is latched by the rising edge ...

Page 22

HN58V65A Series, HN58V66A Series 2. Data protection at V on/off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may CC act as a trigger and turn the EEPROM to ...

Page 23

HN58V65A Series, HN58V66A Series 3. Software data protection To prevent unintentional programming caused by noise generated by external circuits, this device has the software data protection function. In software data protection mode, 3 bytes of data must be input before ...

Page 24

HN58V65A Series, HN58V66A Series Package Dimensions HN58V65AP Series HN58V66AP Series (DP-28, DP-28V) 35.6 36.5 Max 28 1 1.2 1.9 Max 2.54 ± 0.25 Rev.3.00, Dec. 04.2003, page 0.48 ± 0.10 0 ˚ – 15 ˚ ...

Page 25

HN58V65A Series, HN58V66A Series Package Dimensions (cont) HN58V65AFP Series HN58V66AFP Series (FP-28D, FP-28DV) 18.3 18.8 Max 28 1 1.12 Max 1.27 *0.40 ± 0.08 0.38 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.3.00, Dec. 04.2003, page 25 ...

Page 26

... HN58V65A Series, HN58V66A Series Package Dimensions (cont) HN58V65AT Series HN58V66AT Series (TFP-28DB, TFP-28DBV) 8.00 8.20 Max 0.55 *0.22 ± 0.08 0.10 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension Rev.3.00, Dec. 04.2003, page 13.40 ± 0.30 0 ˚ – 5 ˚ Package Code JEDEC JEITA ...

Page 27

... Functional Description 2.0 Jan. 22.1998 Change of Subtitle 3.00 Dec. 04. 2003 Change format issued by Renesas Technology Corp. 2 Ordering Information Addition of HN58V65AP-10E, HN58V66AP-10E, HN58V65AFP-10E, HN58V66AFP-10E, HN58V65AT-10E, HN58V66AT-10E 24-26 Package Dimensions DP-28 to DP-28, DP-28V FP-28D to FP-28D, FP-28DV TFP-28DB to TFP-28DB, TFP-28DBV HN58V65A/HN58V66A Series Data Sheet (typ ...

Page 28

Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...

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