hn58v66ati-10e Renesas Electronics Corporation., hn58v66ati-10e Datasheet
hn58v66ati-10e
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hn58v66ati-10e Summary of contents
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HN58V65AI Series HN58V66AI Series HN58V65A-SR Series HN58V66A-SR Series 64k EEPROM (8-kword × 8-bit) Ready/ function, Wide Temperature Range version Description Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have ...
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... HN58V65AT-10SR 100 ns HN58V66AT-10SR 100 ns HN58V65API-10E 100 ns HN58V66API-10E 100 ns HN58V65AFPI-10E 100 ns HN58V66AFPI-10E 100 ns HN58V65ATI-10E 100 ns HN58V66ATI-10E 100 ns HN58V65AT-10SRE 100 ns HN58V66AT-10SRE 100 ns Rev.3.00, Feb.02.2004, page ≤ 5.5 V Package 600 mil 28-pin plastic DIP (DP-28 400 mil 28-pin plastic SOP (FP-28D) ...
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... Rev.3.00, Feb.02.2004, page HN58V65ATI Series HN58V65AT-SR Series I/O0 19 I/ I/O3 23 I/O4 24 I/O5 25 I/ A10 (Top view) HN58V66ATI Series HN58V66AT-SR Series I/O0 19 I/ I/O3 23 I/O4 24 I/O5 25 I/ A10 (Top view ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Pin Description Pin name A0 to A12 I/ RDY Note: 1. This function is supported by only the HN58V66A series. Block Diagram Note: 1. This function is supported by ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Operation Table Operation Read ×* Standby V IH Write Deselect × × Write Inhibit × V Polling × × Program reset Notes: 1. Refer to the ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Recommended DC Operating Conditions Parameter Symbol Supply voltage Input voltage Operating temperature Topr HN58V65AI/HN58V66AI HN58V65A-SR/HN58V66A-SR min: –1.0 V for pulse width ≤ 50 ns. Notes: 1. ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Capacitance (Ta = +25° MHz) Parameter Symbol 1 Input capacitance Cin* 1 Output capacitance Cout* Note: 1. This parameter is sampled and not 100% tested. AC Characteristics Ta = −20 to +85°C, V Test Conditions ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Write Cycle 1 (2.7 ≤ V < 4 Parameter Address setup time Address hold time to write setup time ( controlled) hold time ( controlled) to write setup time ( controlled) hold time ( controlled) to ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Read Cycle 2 (4.5 ≤ V ≤ 5 Parameter Symbol Address to output delay t ACC to output delay output delay t OE Address to output hold high ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Write Cycle 2 (4.5 ≤ V ≤ 5 Parameter Address setup time Address hold time to write setup time ( controlled) hold time ( controlled) to write setup time ( controlled) hold time ( controlled) to ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out 2 RES * Rev.3.00, Feb.02.2004, page ACC Data out valid DFR ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Byte Write Timing Waveform(1) ( Address Din High-Z RDY/Busy t RES 2 RES * V CC Rev.3.00, Feb.02.2004, page Controlled ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Byte Write Timing Waveform(2) ( Address Din High-Z RDY/Busy t RES 2 RES * V CC Rev.3.00, Feb.02.2004, page Controlled ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Page Write Timing Waveform( Address A0 to A12 OES Din t DB High-Z RDY/Busy t RP ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Page Write Timing Waveform( Address A0 to A12 OES Din t DB High-Z RDY/Busy t RP ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Polling Timing Waveform Address OEH Din X I/O7 Rev.3.00, Feb.02.2004, page Dout OES t DW Dout X ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Toggle Bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Software Data Protection Timing Waveform(1) (in protection mode Address 1555 Data AA Software Data Protection Timing Waveform(2) (in non-protection mode Address 1555 0AAA Data AA 55 Rev.3.00, Feb.02.2004, page 18 ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Functional Description Automatic Page Write Page-mode write feature allows bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional bytes can ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series , Pin Operation During a write cycle, addresses are latched by the falling edge of rising edge Write/Erase Endurance and Data Retention Time 5 The endurance is 10 cycles in case of the page programming ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series 2. Data protection at V on/off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may CC act as a trigger and turn the EEPROM to program mode ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series 2.2 Protection by (only the HN58V66A series) The unprogrammable state can be realized by that the CPU’s reset signal inputs directly to the EEPROM’s pin. programming operation when in case that falls low during programming operation. the last ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series 3. Software data protection To prevent unintentional programming caused by noise generated by external circuits, this device has the software data protection function. In software data protection mode, 3 bytes of data must be input before write data ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Package Dimensions HN58V65API Series HN58V66API Series (DP-28, DP-28V) 35.6 36.5 Max 28 1 1.2 1.9 Max 2.54 ± 0.25 Rev.3.00, Feb.02.2004, page 0.48 ± 0.10 0 ˚ – 15 ˚ Package Code JEDEC ...
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Package Dimensions (cont) HN58V65AFPI Series HN58V66AFPI Series (FP-28D, FP-28DV) 18.3 18.8 Max 28 1 1.12 Max 1.27 *0.40 ± 0.08 0.38 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.3.00, Feb.02.2004, page ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Package Dimensions (cont) HN58V65ATI Series HN58V66ATI Series HN58V65AT-SR Series HN58V66AT-SR Series (TFP-28DB, TFP-28DBV) 8.00 8.20 Max 0.55 *0.22 ± 0.08 0.10 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension Rev.3.00, Feb.02.2004, page 13.40 ± 0.30 0 ˚ – 5 ˚ Package Code ...
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... Feb. 02, 2004 2 Ordering Information 24-26 Package Dimensions Input pulse level: 0 Read Timing Waveform: Correct error Data Protection 3.: Addition of description I (max): 6/10/12/ 6/10/15/25 mA CC3 Addition of HN58V65API-10E, HN58V66API-10E, HN58V65AFPI-10E, HN58V66AFPI-10E, HN58V65ATI-10E, HN58V66ATI-10E, HN58V65AT-10SRE, HN58V66AT-10SRE DP-28 to DP-28, DP-28V FP-28D to FP-28D, FP-28DV TFP-28DB to TFP-28DB, TFP-28DBV CC ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...