74HCT32D,652 NXP Semiconductors, 74HCT32D,652 Datasheet - Page 5

IC QUAD 2-INPUT OR GATE 14-SOIC

74HCT32D,652

Manufacturer Part Number
74HCT32D,652
Description
IC QUAD 2-INPUT OR GATE 14-SOIC
Manufacturer
NXP Semiconductors
Series
74HCTr
Datasheet

Specifications of 74HCT32D,652

Number Of Circuits
4
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Logic Type
OR Gate
Number Of Inputs
2
Current - Output High, Low
4mA, 4mA
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Product
OR
Logic Family
74HCT
High Level Output Current
- 4 mA
Low Level Output Current
4 mA
Propagation Delay Time
9 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Logical Function
OR
Number Of Elements
4
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 125C
Package Type
SO
Number Of Outputs
1
Technology
CMOS
Mounting
Surface Mount
Pin Count
14
Operating Temperature Classification
Automotive
Quiescent Current
2uA
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2823-5
933719470652
Philips Semiconductors
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For DIP14 packages: above 70 C the value of P
2003 Dec 12
V
V
V
T
t
V
I
I
I
I
T
P
SYMBOL
SYMBOL
r
IK
OK
O
CC
, t
amb
stg
CC
I
O
CC
tot
Quad 2-input OR gate
f
; I
For SO14 packages: above 70 C the value of P
For SSOP14 and TSSOP14 packages: above 60 C the value of P
For DHVQFN14 packages: above 60 C the value of P
GND
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
supply voltage
input diode current
output diode current
output source or sink current
V
storage temperature
power dissipation
CC
or GND current
PARAMETER
PARAMETER
V
V
V
CC
CC
CC
CONDITIONS
= 2.0 V
= 4.5 V
= 6.0 V
V
V
note 1
T
0.5 V < V
amb
I
O
< 0.5 V or V
< 0.5 V or V
= 40 to +125 C; note 2
tot
tot
derates linearly with 8 mW/K.
derates linearly with 12 mW/K.
O
tot
5
< V
2.0
0
0
derates linearly with 4.5 mW/K.
MIN.
40
CONDITIONS
I
CC
O
> V
> V
+ 0.5 V; note 1
CC
74HC32
5.0
+25
6.0
CC
TYP.
+ 0.5 V; note 1
tot
+ 0.5 V; note 1
derates linearly with 5.5 mW/K.
6.0
V
V
+125
1000
500
400
MAX.
CC
CC
4.5
0
0
MIN.
40
74HC32; 74HCT32
74HCT32
5.0
+25
6.0
TYP.
MIN.
0.5
65
Product specification
5.5
V
V
+125
500
+7.0
+150
300
MAX.
MAX.
20
20
25
50
CC
CC
V
V
V
ns
ns
ns
V
mA
mA
mA
mA
mW
UNIT
UNIT
C
C

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