2sb1580 ROHM Co. Ltd., 2sb1580 Datasheet
2sb1580
Manufacturer Part Number
2sb1580
Description
Power Transistor -100v , -2a
Manufacturer
ROHM Co. Ltd.
Datasheet
1.2SB1580.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB1580
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Part Number:
2sb1580T100
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Power Transistor (
100V ,
2A)
2SB1580 / 2SB1316
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
∗
∗
∗
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
1 Single pulse Pw=100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Denotes h
Measured using pulse current.
Features
Absolute maximum ratings (Ta = 25GC)
Packaging specifications and h
Equivalent circuit
Electrical characteristics (Ta = 25GC)
Basic ordering unit (pieces)
B
FE
R
R
Package
Parameter
Marking
1
2
Code
Type
2SB1316
2SB1580
h
R
3.5kΩ
300Ω
FE
1
Parameter
R
B
C
E
2
: Base
: Collector
: Emitter
C
E
2SB1580
1k to 10k
MPT3
T100
1000
Symbol
BN∗
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
C
C
Symbol
V
BV
BV
BV
−55 to +150
2SB1316
Cob
1k to 10k
I
I
CE(sat)
FE
CBO
EBO
h
CPT3
2500
f
CBO
CEO
EBO
FE
Limits
−100
−100
T
TL
150
−
−8
−2
−3
10
2
1
−100
−100
−10
1000
Min.
−
−
−
−
−
W(Tc=25°C)
A(Pulse)
A(DC)
Unit
°C
°C
W
V
V
V
Typ.
50
35
−
−
−
−
−
−
−
∗1
∗2
10000
−1.5
Max.
−10
−3
−
−
−
−
−
MHz
Unit
mA
µA
pF
V
V
V
V
−
External dimensions (Unit : mm)
2SB1580
2SB1316
ROHM : MPT3
EIAJ : SC-62
ROHM : CPT3
EIAJ : SC-63
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
/I
= −50µA
= −5mA
= −5mA
B
= −100V
= −7V
= −1A/−1mA
= −2V , I
= −5V , I
= −10V , I
C
E
E
0.8Min.
= −1A
=0.1A , f = 30MHz
2SB1580 / 2SB1316
= 0A , f = 1MHz
Conditions
2.5
1.0
1.5
( 1 )
( 2 )
( 3 )
0.9
9.5
5.5
4.0
2.5
Rev.A
0.5
1.5
∗
∗
C0.5
(1) Base
(2) Collector
(3) Emitter
(1) Base
(2) Collector
(3) Emitter
1/2
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2sb1580 Summary of contents
Page 1
... Transistors Power Transistor ( 100V , 2A) 2SB1580 / 2SB1316 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. Absolute maximum ratings (Ta = 25GC) Parameter Symbol Limits Collector-base voltage V −100 CBO Collector-emitter voltage V −100 CEO ...
Page 2
... Fig.3 DC current gain vs. collector current Ta=25°C 50 ∗ Single NONREPETITIVE 20 PULSE Max. (Pulse ∗ ) Pw=10ms ∗ Pw=100ms ∗ 500m 200m 100m 50m 20m 10m 0.2 0 100 200 500 COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.6 Safe Operating area (2SB1580) Rev.A 2/2 ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...