2sd2216j Panasonic Corporation of North America, 2sd2216j Datasheet
2sd2216j
Manufacturer Part Number
2sd2216j
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD2216J.pdf
(3 pages)
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Transistors
2SD2216J
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1462J
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing.
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
stg
h
h
C
CE(sat)
C
C
CBO
j
CEO
f
CBO
CEO
EBO
FE1
FE2
= 25°C
T
ob
CE(sat)
−55 to +150
Rating
I
I
I
V
V
V
V
I
V
V
C
C
E
C
100
200
125
125
CB
CE
CE
CE
CB
CB
60
50
= 10 µA, I
= 2 mA, I
= 10 µA, I
= 100 mA, I
7
SJC00249CED
= 10 V, I
= 10 V, I
= 2 V, I
= 10 V, I
= 20 V, I
= 10 V, I
B
C
C
E
Conditions
Unit
E
mW
B
C
E
E
mA
mA
= 0
= 100 mA
°C
°C
= 0
= 0
B
V
V
V
= −2 mA, f = 200 MHz
= 0
= 0
= 2 mA
= 0, f = 1 MHz
= 10 mA
Marking Symbol: Y
0.27
±0.02
5˚
(0.50)(0.50)
1.60
1.00
3
1
Min
180
60
50
90
7
+0.05
–0.03
±0.05
2
Typ
150
0.1
3.5
SSMini3-F1 Package
Max
100
390
0.1
0.3
0.12
+0.03
–0.01
EIAJ: SC-89
1: Base
2: Emitter
3: Collector
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1
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2sd2216j Summary of contents
Page 1
... Transistors 2SD2216J Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462J ■ Features • High forward current transfer ratio h • Low collector-emitter saturation voltage V • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. ■ Absolute Maximum Ratings T ...
Page 2
... 200 160 120 120 160 ( °C ) Ambient temperature T a 120 = 25°C 100 = 75°C −25° 0.2 0.4 0.6 0.8 1.0 1 Base-emitter voltage V BE 480 = 400 = 75° ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...